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2N6038

  

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2N6038_2002 [Plastic Darlington Complementary Silicon Power Transistors ]

other parts : 2N6039_2002  2N6035_2002  2N6036_2002 

ONSEMI
ON Semiconductor

. . . designed for general–purpose amplifier and low–speed switching applications.

• High DC Current Gain —
                 hFE = 2000 (Typ) @ IC = 2.0 Adc
• Collector–Emitter Sustaining Voltage — @ 100 mAdc
                 VCEO(sus) = 60 Vdc (Min) — 2N6035, 2N6038 = 80 Vdc
                 (Min) — 2N6036, 2N6039
• Forward Biased Second Breakdown Current Capability
                  IS/b = 1.5 Adc @ 25 Vdc
• Monolithic Construction with Built–In Base–Emitter Resistors to
   Limit Leakage Multiplication
• Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic
   Package

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2N6038_2006 [Plastic Darlington Complementary Silicon Power Transistors ]

other parts : 2N6034_2006  2N6035_2006  2N6036_2006  2N6039_2006  2N6034G_2006  2N6035G_2006  2N6036G_2006  2N6038G_2006  2N6039G_2006 

ONSEMI
ON Semiconductor

Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications.

Features
• ESD Ratings: Machine Model, C; > 400 V
                         Human Body Model, 3B; > 8000 V
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Pb−Free Packages are Available*

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2N6038 [Plastic Darlington Complementary Silicon Power Transistors ]

other parts : 2N6034  2N6035  2N6036  2N6039  2N6034G  2N6035G  2N6036G  2N6038G  2N6039G 

ONSEMI
ON Semiconductor

Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications.

Features
• ESD Ratings: Machine Model, C; > 400 V
                         Human Body Model, 3B; > 8000 V
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Pb−Free Packages are Available*

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2N6038G_2006 [Plastic Darlington Complementary Silicon Power Transistors ]

other parts : 2N6034_2006  2N6035_2006  2N6036_2006  2N6038_2006  2N6039_2006  2N6034G_2006  2N6035G_2006  2N6036G_2006  2N6039G_2006 

ONSEMI
ON Semiconductor

Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications.

Features
• ESD Ratings: Machine Model, C; > 400 V
                         Human Body Model, 3B; > 8000 V
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Pb−Free Packages are Available*

View
2N6038G [Plastic Darlington Complementary Silicon Power Transistors ]

other parts : 2N6034  2N6035  2N6036  2N6038  2N6039  2N6034G  2N6035G  2N6036G  2N6039G 

ONSEMI
ON Semiconductor

Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications.

Features
• ESD Ratings: Machine Model, C; > 400 V
                         Human Body Model, 3B; > 8000 V
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Pb−Free Packages are Available*

View
2N6038 [MIDIUM POWER DAR;OMGTONS ]

other parts : 2N6034  2N6035  2N6036  2N6037  2N6039 

ST-Microelectronics
STMicroelectronics

DESCRIPTION
The 2N6037, 2N6038 and 2N6039 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec To-126 plastic package.
The complementary PNP types are the 2N6034, 2N6035 and 2N6036 respectively.

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2N6038 [Silicon NPN Power Transistors ]

other parts : 2N6037  2N6039 

Iscsemi
Inchange Semiconductor

DESCRIPTION
• With TO-126 package
• Complement to type 2N6034/6035/6036
• DARLINGTON
• High DC current gain

APPLICATIONS
• Designed for general-purpose amplifier
   and low-speed switching applications

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2N6038 [COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS ]

other parts : 2N6034  2N6035  2N6036  2N6037  2N6039 

NJSEMI
New Jersey Semiconductor

DESCRIPTION:
2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications.

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2N6038 [Silicon NPN Power Transistors ]

other parts : 2N6037  2N6039 

Savantic
SavantIC Semiconductor

DESCRIPTION
• With TO-126 package
• Complement to type 2N6034/6035/6036
• DARLINGTON
• High DC current gain

APPLICATIONS
• Designed for general-purpose amplifier
   and low-speed switching applications

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2N6038 [SILICON POWER DARLINGTON TRANSISTORS ]

other parts : 2N6034  2N6035  2N6036  2N6037  2N6039 

CDIL
Continental Device India Limited

SILICON POWER DARLINGTON TRANSISTORS

Designed for General -Purpose Amplifier & Low Speed Switching Applications.

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