. . . designed for general–purpose amplifier and low–speed switching applications.

• High DC Current Gain –
           hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector–Emitter Sustaining Voltage – @ 100 mAdc –
           VCEO(sus) = 60 Vdc (Min) – 2N6040, 2N6043
                              = 100 Vdc (Min) – 2N6042, 2N6045
• Low Collector–Emitter Saturation Voltage –
           VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc – 2N6043,44
                           = 2.0 Vdc (Max) @ IC = 3.0 Adc – 2N6042, 2N6045
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors

Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications.

Features
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 100 mAdc −
                 VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043
                 = 100 Vdc (Min) − 2N6042, 2N6045
• Low Collector−Emitter Saturation Voltage −
                  VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44
                  = 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V
                         Machine Model, C > 400 V
• Pb-Free Packages are Available*

Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications.

Features
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 100 mAdc −
                 VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043
                 = 100 Vdc (Min) − 2N6042, 2N6045
• Low Collector−Emitter Saturation Voltage −
                  VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44
                  = 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V
                         Machine Model, C > 400 V
• Pb-Free Packages are Available*

Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications.

Features
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 100 mAdc −
                 VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043
                 = 100 Vdc (Min) − 2N6042, 2N6045
• Low Collector−Emitter Saturation Voltage −
                  VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44
                  = 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V
                         Machine Model, C > 400 V
• These Devices are Pb−Free and are RoHS Compliant*

DESCRIPTION
The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications.

MARKING: FULL PART NUMBER

Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications.

Features
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 100 mAdc −
                 VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043
                 = 100 Vdc (Min) − 2N6042, 2N6045
• Low Collector−Emitter Saturation Voltage −
                  VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44
                  = 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V
                         Machine Model, C > 400 V
• Pb-Free Packages are Available*

Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications.

Features
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 100 mAdc −
                 VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043
                 = 100 Vdc (Min) − 2N6042, 2N6045
• Low Collector−Emitter Saturation Voltage −
                  VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44
                  = 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V
                         Machine Model, C > 400 V
• These Devices are Pb−Free and are RoHS Compliant*

Power Transistors
TO-220 Case

Shaded areas indicate Darlington.
Available in TO-220FP Full Pak upon request.

Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications.

Features
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 100 mAdc −
                 VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043
                 = 100 Vdc (Min) − 2N6042, 2N6045
• Low Collector−Emitter Saturation Voltage −
                  VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44
                  = 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V
                         Machine Model, C > 400 V
• Pb-Free Packages are Available*

DESCRIPTION
•· High DC Current Gain-
   : hFE = 1000(Min)@ IC= -4A
• Collector-Emitter Sustaining Voltage-
   : VCEO(SUS) = -60V(Min)
• Low Collector-Emitter Saturation Voltage-
   : VCE(sat) = -2.0V(Max)@ IC= -4A
• Complement to Type 2N6043

APPLICATIONS
• Designed for general purpose amplifier and low speed
   switching applications.