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2N6040

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2N6040 [Silicon PNP Darlington Power Transistor ]	Inchange Semiconductor
DESCRIPTION •· High DC Current Gain- : hFE = 1000(Min)@ IC= -4A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -4A • Complement to Type 2N6043 APPLICATIONS • Designed for general purpose amplifier and low speed switching applications.	View

2N6040_2002 [Plastic Medium-Power Complementary Silicon Transistors ]

other parts : 2N6042_2002 2N6043_2002 2N6045_2002

ON Semiconductor

. . . designed for general–purpose amplifier and low–speed switching applications.

• High DC Current Gain –
           hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector–Emitter Sustaining Voltage – @ 100 mAdc –
           VCEO(sus) = 60 Vdc (Min) – 2N6040, 2N6043
                              = 100 Vdc (Min) – 2N6042, 2N6045
• Low Collector–Emitter Saturation Voltage –
           VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc – 2N6043,44
                           = 2.0 Vdc (Max) @ IC = 3.0 Adc – 2N6042, 2N6045
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors

View

2N6040_2006 [Plastic Medium-Power Complementary Silicon Transistors ]

other parts : 2N6042_2006 2N6043_2006 2N6045_2006 2N6040G_2006 2N6042G_2006 2N6043G_2006 2N6045G_2006

ON Semiconductor

Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications.

Features
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 100 mAdc −
                 VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043
                 = 100 Vdc (Min) − 2N6042, 2N6045
• Low Collector−Emitter Saturation Voltage −
                  VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44
                  = 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V
                         Machine Model, C > 400 V
• Pb-Free Packages are Available*

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2N6040_2007 [Plastic Medium-Power Complementary Silicon Transistors ]

other parts : 2N6042_2007 2N6043_2007 2N6045_2007 2N6040G_2007 2N6042G_2007 2N6043G_2007 2N6045G_2007

ON Semiconductor

Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications.

View

2N6040 [Plastic Medium-Power Complementary Silicon Transistors ]

other parts : 2N6042 2N6043 2N6045 2N6040G 2N6042G 2N6043G 2N6045G

ON Semiconductor

Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications.

View

2N6040 [COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ] other parts : 2N6041 2N6042 2N6043 2N6044 2N6045	Central Semiconductor
DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER	View

2N6040 [COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ] other parts : 2N6041 2N6042 2N6043 2N6044 2N6045 MJE6044 MJE6043 MJE6041 MJE6040 MJE6045	New Jersey Semiconductor
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS	View

2N6040 [DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ]

other parts : 2N6041 2N6042 2N6043 2N6044 2N6045

Mospec Semiconductor

. . . designed for general–purpose amplifier and low–speed switching applications.

FEATURES:
• Collector–Emitter Sustaining Voltage -
   VCEO(sus) = 60 V (Min) – 2N6040, 2N6043
                      = 80 V (Min) – 2N6041, 2N6044
                      = 100 V (Min) – 2N6042, 2N6045
• Collector–Emitter Saturation Voltage
   VCE(sat) = 2.0 V (Max) @ IC = 4.0 A – 2N6040, 41, 2N6043, 44
                   = 2.0 V (Max) @ IC = 4.0 A – 2N6042, 2N6045
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors

View

2N6040G_2006 [Plastic Medium-Power Complementary Silicon Transistors ]

other parts : 2N6040_2006 2N6042_2006 2N6043_2006 2N6045_2006 2N6042G_2006 2N6043G_2006 2N6045G_2006