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2N7002

  

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2N7002 [N-Channel 60-V (D-S) MOSFET ]

other parts : BS170  2N7000  VQ1000J  VQ1000P  2N7002-E3  2N7002-T1-E3  2N7002-T1-GE3 

Vishay
Vishay Semiconductors

FEATURES
● Low On-Resistance: 2.5 Ω
● Low Threshold: 2.1 V
● Low Input Capacitance: 22 pF
● Fast Switching Speed: 7 ns
● Low Input and Output Leakage

BENEFITS
● Low Offset Voltage
● Low-Voltage Operation
● Easily Driven Without Buffer
● High-Speed Circuits
● Low Error Voltage

APPLICATIONS
● Direct Logic-Level Interface: TTL/CMOS
● Drivers: Relays, Solenoids, Lamps, Hammers,
   Displays, Memories, Transistors, etc.
● Battery Operated Systems
● Solid-State Relays

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2N7002 [N-Channel Enhancement Mode Field Effect Transistor ]

other parts : 2N7000  NDS7002A  2N7000_D26Z  2N7000_D74Z  2N7000_D75Z  2N7002_S00Z 

Fairchild
Fairchild Semiconductor

Description
These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features
• High Density Cell Design for Low RDS(ON)
• Voltage Controlled Small Signal Switch
• Rugged and Reliable
• High Saturation Current Capability

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2N7002 [N-CHANNEL ENHANCEMENT MODE MOSFET ]

other parts : 2N7002-7-F  2N7002-13-F  2N7002Q-7-F 

Diodes
Diodes Incorporated.

Description
This MOSFET has been designed to  minimize the on-state resistance  (RDS(ON)) and yet maintain superior switching performance, making it  ideal for high efficiency po wer management applications.

Features
● Low On-Resistance     
● Low Gate Threshold Voltage
● Low Input Capacitance
● Fast Switching Speed 
● Small Surface Mount Package
● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
● Halogen and Antimony Free. “Green” Device (Notes 3 & 4)
● Qualified to AEC-Q101 standards for High Reliability

Applications
● Motor Control     
● Power Management Functions

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2N7002_2007 [N-Channel Enhancement-Mode Vertical DMOS FETs ]

other parts : 2N7002-G_2007 

Supertex
Supertex Inc

General Description
The Supertex 2N7002 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coeffi cient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Features
► Free from secondary breakdown
► Low power drive requirement
► Ease of paralleling
► Low CISS and fast switching speeds
► Excellent thermal stability
► Integral Source-Drain diode
► High input impedance and high gain
► Complementary N- and P-Channel devices

Applications
► Motor controls
► Converters
► Amplifi ers
► Switches
► Power supply circuits
► Drivers (relays, hammers, solenoids, lamps,
   memories, displays, bipolar transistors, etc.)

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2N7002 [N-Channel Enhancement-Mode Vertical DMOS FETs ]

other parts : 2N7002-G 

Supertex
Supertex Inc

General Description
The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coeffcient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Features
► Free from secondary breakdown
► Low power drive requirement
► Ease of paralleling
► Low CISS and fast switching speeds
► Excellent thermal stability
► Integral source-drain diode
► High input impedance and high gain

Applications
► Motor controls
► Converters
► Amplifers
► Switches
► Power supply circuits
► Drivers (relays, hammers, solenoids, lamps,
   memories, displays, bipolar transistors, etc.)

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2N7002 [N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ]

other parts : 2N7002-AE3-R  2N7002L-AE3-R 

UTC
Unisonic Technologies

DESCRIPTION
The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications

FEATURES
* High density cell design for low RDS(ON).
* Voltage controlled small signal switch
* Rugged and reliable
* High saturation current capability

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2N7002 [N-channel enhancement mode vertical D-MOS transistor ]

other parts : 2N7000  NDF7000A  NDS7002A 

National-Semiconductor
National ->Texas Instruments

These n-channel enhancement mode field effect transistors are produced using National's very high cell density third generation DMOS technology. These products have been designed to minimize on-state resistance provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2A. This product is particularly suited to low voltage, low current applications, such as small servo motor controls, power MOSFET gate drivers, and other switching applications.

 

Acquired by Texas Instruments on September 23rd, 2011.

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2N7002 [N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET ]

other parts : ST2N  2N7000  2N7000G 

ST-Microelectronics
STMicroelectronics

Description
This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features
■ Low Qg
■ Low threshold drive

Application
■ Switching applications

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2N7002 [SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET ] Central-Semiconductor
Central Semiconductor

DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N7002 type is an  N-Channel enhancement-mode MOSFET manufactured  by the N-Channel DMOS Process, designed for high  speed pulsed amplifier and driver applications.

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2N7002_2008 [N-Channel MOSFET ]

other parts : 2N7002-TP_2008 

MCC
Micro Commercial Components

Features
• Case Material: Molded Plastic. UL Flammability
   Classification Rating 94V-0 and MSL Rating 1
• Advanced Trench Process Technology
• High Input Impedance
• High Speed Switching
• CMOS Logic Compatible Input
• Marking : 7002/S72

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