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2N7002K

  

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2N7002K [TrenchMOS™ logic level FET ]

other parts : 2N7002K,215 

NXP
NXP Semiconductors.

Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Features
■ Logic level compatible
■ Subminiature surface mount package
■ Very fast switching
■ Gate-source ESD protection diodes.

Applications
■ Relay driver
■ High speed line driver.

Quick reference data
■ VDS ≤ 60 V
■ Ptot ≤ 0.83 W
■ ID ≤ 340 mA
■ RDSon ≤ 3.9 Ω.

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2N7002K [60V ESD Protected N-Channel Enhancement Mode MOSFET ] HY
HY ELECTRONIC CORP.

RDS(ON), VGS @10V, IDS@ 500mA=2Ω
RDS(ON), VGS @4.5V, IDS@ 200mA=3Ω

FEATURES
• Advanced Trench Process Technology
• Ultra Low On Resistance : 2Ω
• Fast Switching Speed : 20ns
• Low Input and Output Leakage Current
• 2KV ESD Protection
• Specially Designed for High Speed Circuit, Battery Operated System, Drivers : Lamps, Transistors, Relays, Memories, Display, etc..
• Compliant to EU RoHS Directive 2002/95/EC

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2N7002K [N-Channel 60-V (D-S) MOSFET ]

other parts : 2N7002K-T1  2N7002K-T1-E3  2N7002K-T1-GE3  2N7002KL-TR1-E3 

Vishay
Vishay Semiconductors

DESCRIPTION
The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

CHARACTERISTICS
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics

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2N7002K [N-Channel 60-V (D-S) MOSFET ] SILIKRON
Silikron Semiconductor Co.,LTD.

GENERAL FEATURES
● VDS = 60V,ID = 0.3A
    RDS(ON) < 3Ω @ VGS=5V
    RDS(ON) < 2Ω @ VGS=10V
    ESD Rating: 1000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package

APPLICATION
●Direct Logic-Level Interface: TTL/CMOS
●Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc.
●Battery Operated Systems
●Solid-State Relays

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2N7002K [60V N-Channel Enhancement Mode MOSFET - ESD Protected ] PanJit
PANJIT INTERNATIONAL

FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• Component are in compliance with EU RoHS 2002/95/EC directives

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2N7002K [300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET ]

other parts : 2N7002KG  2N7002KG-AE2-R  2N7002KL-AE2-R 

UTC
Unisonic Technologies

DESCRIPTION
The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during
operation. This device is suitable for use as a load switch or in PWM applications.

„ FEATURES
* Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF)
* ESD Protected
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

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2N7002K [Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23 ]

other parts : 2N7002KT1G  2N7002KT3G  2V7002K  2V7002KT1G  2V7002KT3G 

ON-Semiconductor
ON Semiconductor

Features
• ESD Protected
• Low RDS(on)
• Surface Mount Package
• 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications
• Low Side Load Switch
• Level Shift Circuits
• DC−DC Converter
• Portable Applications i.e. DSC, PDA, Cell Phone, etc.

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2N7002K [Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23 ]

other parts : 2N7002KT1G  2N7002KT3G  2V7002K  2V7002KT1G  2V7002KT3G 

ONSEMI
ON Semiconductor

Features
• ESD Protected
• Low RDS(on)
• Surface Mount Package
• 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications
• Low Side Load Switch
• Level Shift Circuits
• DC−DC Converter
• Portable Applications i.e. DSC, PDA, Cell Phone, etc.

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2N7002KW [N-Channel Enhancement Mode Field Effect Transistor ] Fairchild
Fairchild Semiconductor

Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Pb Free/RoHS Compliant
• ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101

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2N7002KG [190 mA, 60 V, RDS(ON) = 2 Ω N-Ch Small Signal MOSFET with Gate Protection ] Secos
Secos Corporation.

FEATURES
z 2 kV ESD Protection
z Lower On-resistance: 2 Ω
z Low Threshold: 2 V (Typ.)
z Low Input Capacitance: 25 pF
z Fast Switching Performance: 25 nS
z Low Input and Output Leakage

 

APPLICATIONS
z Direct Logic-Level Interface: TTL/CMOS
z Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories,Transistors, etc.
z Battery Operated Systems
z Solid-State Relays

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