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2N7002K-T1

  

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2N7002K-T1 [N-Channel 60-V (D-S) MOSFET ]

other parts : 2N7002K  2N7002K-T1-E3  2N7002K-T1-GE3  2N7002KL-TR1-E3 

Vishay
Vishay Semiconductors

DESCRIPTION
The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

CHARACTERISTICS
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics

View
2N7002K-T1-E3 [N-Channel 60-V (D-S) MOSFET ]

other parts : 2N7002K  2N7002K-T1  2N7002K-T1-GE3  2N7002KL-TR1-E3 

Vishay
Vishay Semiconductors

DESCRIPTION
The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

CHARACTERISTICS
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics

View
2N7002K-T1-GE3 [N-Channel 60-V (D-S) MOSFET ]

other parts : 2N7002K  2N7002K-T1  2N7002K-T1-E3  2N7002KL-TR1-E3 

Vishay
Vishay Semiconductors

DESCRIPTION
The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

CHARACTERISTICS
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics

View
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