Integrated circuits, Transistor, Semiconductors Free Datasheet Search and Download Site

2SA1960

  

Datasheet

Match, Like 2SA1960 2SA1961 2SA1962 2SA1963 2SA1964 2SA1965 2SA1967 2SA1968 2SA1969
Start with 2SA1961* 2SA1962* 2SA1963* 2SA1964* 2SA1965* 2SA1967* 2SA1968*
End N/A
Included N/A
View Details    
2SA1961 [Silicon PNP epitaxial planer type ]

other parts : A1961  A1961P  A1961Q  2SA1961P  2SA1961Q 

Panasonic
Panasonic Corporation

Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC5419

■Features
● High collector to emitter voltage VCEO.

View
2SA1962 [TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS) ]

other parts : A1962  A1962-O  2SA1962-O  2SA1962-O(Q)  2SA1962-O(Q,T) 

Toshiba
Toshiba

Power Amplifier Applications, TOSHIBA Transistor  Silicon PNP Triple Diffused Type.

1.  High breakdown voltage: VCEO= −230 V (min)
2.  Complementary to 2SC5242
3.  Recommended for 80-W high-fidelity audio frequency amplifier output stage.

View
2SA1962 [PNP Epitaxial Silicon Transistor ]

other parts : A1962  J4213O  J4213R  A1962O  A1962R  FJA4213  FJA4213RTU  FJA4213OTU  2SA1962RTU  2SA1962OTU 

Fairchild
Fairchild Semiconductor

Features
• High Current Capability: IC = -17A
• High Power Dissipation : 130watts
• High Frequency : 30MHz.
• High Voltage : VCEO= -250V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to 2SC5242/FJA4313.
• Thermal and electrical Spice models are available.
• Same transistor is also available in:
   -- TO264 package, 2SA1943/FJL4215 : 150 watts
   -- TO220 package, FJP1943 : 80 watts
   -- TO220F package, FJPF1943 : 50 watts

Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier

View
2SA1963 [PNP Epitaxial Planar Silicon Transistor ] SANYO
SANYO -> Panasonic

High-Frequecy Low-Noise Amplifier,Ultrahigh-Speed Switching Applications

Features
· Low noise : NF=1.5dB typ (f=1GHz).
· High gain : | S2le |2=9dB typ (f=1GHz).
· High cutoff frequency : fT=5GHz typ.

View
2SA1964 [For audio amplifier output stages/TV velocity modulation (-160V, -1.5A) ]

other parts : A1964  C5248  2SC5248 

ROHM
ROHM Semiconductor

Features
1) Flat DC current gain characteristics.
2) High breakdown voltage.
3) High ft. (Typ. 150MHz)
4) Wide SOA(safe operating area)
5) Complements the 2SC5248.

View
2SA1967 [NPN Triple Diffused Planar Silicon Transistor ]

other parts : A1967 

SANYO
SANYO -> Panasonic

High-Voltage Amplifier, High-Voltage Switching Applications

Features
• High breakdown voltage (VCEO min=–900V).
• Small Cob (Cob typ=2.2pF).
• High reliability (Adoption of HVP process).

View
2SA1968 [High-Voltage Amplifier, High-Voltage Switching Applications ]

other parts : A1968 

SANYO
SANYO -> Panasonic

Features
• High breakdown voltage (VCEO min=–900V).
• Small Cob (Cob typ=2.2pF).
• High reliability (Adoption of HVP process).
• Package of full isolation type.

View
2SA1961P [Silicon PNP epitaxial planer type ]

other parts : A1961  A1961P  A1961Q  2SA1961  2SA1961Q 

Panasonic
Panasonic Corporation

Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC5419

■Features
● High collector to emitter voltage VCEO.

View
2SA1961Q [Silicon PNP epitaxial planer type ]

other parts : A1961  A1961P  A1961Q  2SA1961  2SA1961P 

Panasonic
Panasonic Corporation

Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC5419

■Features
● High collector to emitter voltage VCEO.

View
2SA1962-O [TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS) ]

other parts : A1962  2SA1962  A1962-O  2SA1962-O(Q)  2SA1962-O(Q,T) 

Toshiba
Toshiba

Power Amplifier Applications, TOSHIBA Transistor  Silicon PNP Triple Diffused Type.

1.  High breakdown voltage: VCEO= −230 V (min)
2.  Complementary to 2SC5242
3.  Recommended for 80-W high-fidelity audio frequency amplifier output stage.

View
1
Share Link : 

HOME

Language : 한국어     日本語     русский     简体中文     español
@ 2015 - 2018  [ Home ][ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]