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2SA1960

  

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Match, Like 2SA1960 2SA1961 2SA1962 2SA1963 2SA1964 2SA1965 2SA1967 2SA1968 2SA1969
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2SA1961 [Silicon PNP epitaxial planer type ]

other parts : A1961  A1961P  A1961Q  2SA1961P  2SA1961Q 

Panasonic
Panasonic Corporation

Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC5419

■Features
● High collector to emitter voltage VCEO.

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2SA1962 [TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS) ]

other parts : A1962  A1962-O  2SA1962-O  2SA1962-O(Q)  2SA1962-O(Q,T) 

Toshiba
Toshiba

Power Amplifier Applications, TOSHIBA Transistor  Silicon PNP Triple Diffused Type.

1.  High breakdown voltage: VCEO= −230 V (min)
2.  Complementary to 2SC5242
3.  Recommended for 80-W high-fidelity audio frequency amplifier output stage.

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2SA1962 [PNP Epitaxial Silicon Transistor ]

other parts : A1962  J4213O  J4213R  A1962O  A1962R  FJA4213  FJA4213RTU  FJA4213OTU  2SA1962RTU  2SA1962OTU 

Fairchild
Fairchild Semiconductor

Features
• High Current Capability: IC = -17A
• High Power Dissipation : 130watts
• High Frequency : 30MHz.
• High Voltage : VCEO= -250V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to 2SC5242/FJA4313.
• Thermal and electrical Spice models are available.
• Same transistor is also available in:
   -- TO264 package, 2SA1943/FJL4215 : 150 watts
   -- TO220 package, FJP1943 : 80 watts
   -- TO220F package, FJPF1943 : 50 watts

Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier

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2SA1962 [Silicon PNP Power Transistors ]

other parts : A1962 

Savantic
SavantIC Semiconductor

DESCRIPTION
• With TO-3P(I) package
• Complement to type 2SC5242
• High collector voltage: VCEO=-230V(Min)

APPLICATIONS
• Power amplifier applications
• Recommend for 80W high fidelity audio
   frequency amplifier output stage

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2SA1962 [Silicon PNP Power Transistor ]

other parts : A1962 

Iscsemi
Inchange Semiconductor

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= -230V(Min)
• Good Linearity of hFE
• Complement to Type 2SC5242

APPLICATIONS
•  Power amplifier applications
•  Recommend for 80W high fidelity audio frequency
   amplifier output stage applications

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2SA1962 [Silicon PNP Power Transistors ]

other parts : A1962 

JMNIC
Quanzhou Jinmei Electronic

DESCRIPTION
• With TO-3P(I) package
• Complement to type 2SC5242
• High collector voltage: VCEO=-230V(Min)

APPLICATIONS
• Power amplifier applications
• Recommend for 80W high fidelity audio
   frequency amplifier output stage

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2SA1962 [Silicon PNP Power Transistor ]

other parts : A1962 

NJSEMI
New Jersey Semiconductor

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= -230V(Min)
• Good Linearity of hFE
• Complement to Type 2SC5242

APPLICATIONS
•  Power amplifier applications
•  Recommend for 80W high fidelity audio frequency
   amplifier output stage applications

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2SA1963 [PNP Epitaxial Planar Silicon Transistor ] SANYO
SANYO -> Panasonic

High-Frequecy Low-Noise Amplifier,Ultrahigh-Speed Switching Applications

Features
· Low noise : NF=1.5dB typ (f=1GHz).
· High gain : | S2le |2=9dB typ (f=1GHz).
· High cutoff frequency : fT=5GHz typ.

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2SA1964 [For audio amplifier output stages/TV velocity modulation (-160V, -1.5A) ]

other parts : A1964  C5248  2SC5248 

ROHM
ROHM Semiconductor

Features
1) Flat DC current gain characteristics.
2) High breakdown voltage.
3) High ft. (Typ. 150MHz)
4) Wide SOA(safe operating area)
5) Complements the 2SC5248.

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2SA1964 [Silicon PNP Power Transistor ]

other parts : A1964 

Iscsemi
Inchange Semiconductor

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   :V(BR)CEo=-160V(Min)
• Good Linearity of hFE
• Wide Area of Safe Operation
• Complement to Type 2SC5248

APPLICATIONS
• Power amplifier applications.
• Driver stage amplifier applications.

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