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2SC1947

  

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2SC1946 [NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications) ] NJSEMI
New Jersey Semiconductor
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2SC1944 [NPN EPITAXIAL PLANAR TYPE(for power Transistor) ] Mitsubishi
MITSUBISHI ELECTRIC
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2SC1942 [Silicon NPN Triple Diffused ]

other parts : C1942 

Hitachi
Hitachi -> Renesas Electronics

1. High Voltage Power Switching

2. TV Horizontal Deflection Output

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2SC1947 [RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE ]

other parts : C1947 

Mitsubishi
MITSUBISHI ELECTRIC

DESCRIPTION
2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications.

FEATURES
● High power gain: Gpe ≥ 10.7dB
   @VCC = 13.5V, PO = 3.5W, f = 175MHz
● TO-39 metal seeled package for high reliability.
● Emitter electrode is connected electrically to the case

APPLICATION
   1 to 3 watt power amplifiers in VHF band mobile radio applications.

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2SC1941 [NPN SILICON TRANSISTOR ]

other parts : 2SC1941L 

NEC
NEC => Renesas Technology

NPN SILICON TRANSISTOR

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2SC1940 [NPN SILICON TRANSISTOR ]

other parts : 2SC1940K  2SC1940L  2SC1940M  C1940  C1940K  C1940L  C1940M 

NEC
NEC => Renesas Technology

NPN SILICON TRANSISTOR

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2SC1947 [HIGH POWER TRANSISTOR SILICON NPN ]

other parts : C1947 

NJSEMI
New Jersey Semiconductor

HIGH POWER TRANSISTOR SILICON NPN

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2SC1940 [NPN SILICON TRANSISTOR ]

other parts : 2SC1940K  2SC1940L  2SC1940M  C1940  C1940K  C1940L  C1940M 

NJSEMI
New Jersey Semiconductor

NPN SILICON TRANSISTOR

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2SC1945 [RF Power Transistor ]

other parts : C1945 

Mitsubishi
MITSUBISHI ELECTRIC

2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.

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2SC1942 [SILICON POWER TRANSISTOR ] Savantic
SavantIC Semiconductor
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