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2SC1947

  

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2SC1947 [RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE ]

other parts : C1947 

Mitsubishi
MITSUBISHI ELECTRIC

DESCRIPTION
2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications.

FEATURES
● High power gain: Gpe ≥ 10.7dB
   @VCC = 13.5V, PO = 3.5W, f = 175MHz
● TO-39 metal seeled package for high reliability.
● Emitter electrode is connected electrically to the case

APPLICATION
   1 to 3 watt power amplifiers in VHF band mobile radio applications.

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2SC1947 [HIGH POWER TRANSISTOR SILICON NPN ]

other parts : C1947 

NJSEMI
New Jersey Semiconductor

HIGH POWER TRANSISTOR SILICON NPN

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