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2SC1971

  

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2SC1971 [RF POWER TRANSISTOR NPN EPITAXAIL PLANAR TYPE ]

other parts : C1971 

Mitsubishi
MITSUBISHI ELECTRIC

DESCRIPTION
2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications.

FEATURES
● High power gain: Gpe ≥ 10dB,
   @VCC = 13.5V, Po = 6W, f = 175MHz
● Emitter ballasted construction, gold metallization for high
   reliability and good performances.
● TO-220 package similar is combinient for mounting.
● Ability to withstand more than 20:1 load
   VSWR when operated at VCC = 15.2V, Po = 6W, f = 175MHz

APPLICATION
   4 to 5 watts output power amplifiers in VHF band applications.

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2SC1971 [NPN EPITAXAIL PLANAR TYPE TRANSISTOR FOR RF POWER AMPLIFIERS ]

other parts : C1971 

NJSEMI
New Jersey Semiconductor

DESCRIPTION
2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications.

FEATURES
● High power gain: Gpe ≥ 10dB,
   @VCC = 13.5V, Po = 6W, f = 175MHz
● Emitter ballasted construction, gold metallization for high
   reliability and good performances.
● TO-220 package similar is combinient for mounting.
● Ability to withstand more than 20:1 load
   VSWR when operated at VCC = 15.2V, Po = 6W, f = 175MHz

APPLICATION
   4 to 5 watts output power amplifiers in VHF band applications.

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2SC1971 [NPN SILICON RF POWER TRANSISTOR ]

other parts : C1971 

ASI
Advanced Semiconductor

DESCRIPTION:
The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications.

FEATURES INCLUDE:
• Replaces Original 2SC1971 in Most Applications
• High Gain Reduces Drive Requirements
• Economical TO-220CE Package

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2SC1971 [Silicon NPN Power Transistor ]

other parts : C1971 

Iscsemi
Inchange Semiconductor

DESCRIPTION
• High Power Gain-
   : Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V
• High Reliability

APPLICATIONS
• Designed for RF power amplifiers on VHF band mobile radio applications.

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