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2SC1971

  

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2SC1971 [Silicon NPN Power Transistor ]

other parts : C1971 

Iscsemi
Inchange Semiconductor

DESCRIPTION
• High Power Gain-
   : Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V
• High Reliability

APPLICATIONS
• Designed for RF power amplifiers on VHF band mobile radio applications.

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2SC1970 [Silicon NPN Power Transistor ]

other parts : C1970 

Iscsemi
Inchange Semiconductor

DESCRIPTION
• High Power Gain-
   : Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V
• High Reliability

APPLICATIONS
• Designed for RF power amplifiers on VHF band mobile radio applications.

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2SC1972 [NPN SILICON RF POWER TRANSISTOR ]

other parts : C1972 

ASI
Advanced Semiconductor

DESCRIPTION:
The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications.

FEATURES INCLUDE:
• Replaces Original 2SC1972 in Most Applications
• High Gain Reduces Drive Requirements
• Economical TO-220CE Package

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2SC1971 [NPN SILICON RF POWER TRANSISTOR ]

other parts : C1971 

ASI
Advanced Semiconductor

DESCRIPTION:
The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications.

FEATURES INCLUDE:
• Replaces Original 2SC1971 in Most Applications
• High Gain Reduces Drive Requirements
• Economical TO-220CE Package

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2SC1974 [Si NPN Epitaxialm Planar ] ETC
Unspecified
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2SC1975 [Si NPN Epitaxial Planar ] ETC
Unspecified
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2SC1973 [Silicon NPN epitaxial planer type ]

other parts : 2SC1980  2SC2076  C1973  C1980  C2076 

Panasonic
Panasonic Corporation

2SC1973, 2SC1980, 2SC2076, C1973, C1980, C2076 Datasheet PDF


 

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2SC1970 [RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE ]

other parts : C1970 

Mitsumi
Mitsumi

DESCRIPTION
2SC1970, C1970 is a silicon NPN epitaxial planar transistor designed for RF power amplifiers on VHF band mobile radio applications.

FEATURES
● High power gain: Gpe ≥ 9.2dB
   @VCC = 13.5V, PO = 1W, f = 175MHz
● Emitter ballasted construction, gold metallization for high
   reliability and good performances.
● TO-220 package similarly is combinient for mounting

APPLICATION
   0.8 to 1 watts output power amplifiers and driver in VHF band mobile radio applications

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2SC1972 [NPN transistor for 10 to 14 watts output power amplifiers in VHF band mobile radio applications ]

other parts : C1972 

Mitsubishi
MITSUBISHI ELECTRIC

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2SC1971 [RF POWER TRANSISTOR NPN EPITAXAIL PLANAR TYPE ]

other parts : C1971 

Mitsubishi
MITSUBISHI ELECTRIC

DESCRIPTION
2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications.

FEATURES
● High power gain: Gpe ≥ 10dB,
   @VCC = 13.5V, Po = 6W, f = 175MHz
● Emitter ballasted construction, gold metallization for high
   reliability and good performances.
● TO-220 package similar is combinient for mounting.
● Ability to withstand more than 20:1 load
   VSWR when operated at VCC = 15.2V, Po = 6W, f = 175MHz

APPLICATION
   4 to 5 watts output power amplifiers in VHF band applications.

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