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2SC3603

  

データシート

一致 , 類似 2SC3603
前一致 2SC3603*
後一致 N/A
含む N/A

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メーカー 部品番号 コンポーネント説明 ビュー
NEC
NEC => Renesas Technology
2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

The 2SC3603 is an NPN epitaxial transistor designed for low noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

FEATURES
• Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz
• High power gain : GA = 10 dB TYP. @ f = 2.0 GHz

 

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