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2SC3603

  

数据手册 ( 数据表 )

如同 2SC3603
开始 2SC3603*
结尾 N/A
包括 N/A

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生产厂家 零件编号 产品描述 (功能) 视图
NEC
NEC => Renesas Technology
2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

The 2SC3603 is an NPN epitaxial transistor designed for low noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

FEATURES
• Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz
• High power gain : GA = 10 dB TYP. @ f = 2.0 GHz

 

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