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2SC4093

  

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2SC4093 [NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD ]

other parts : C4093  C4093-T1  2SC4093-T1 

Renesas
Renesas Electronics

DESCRIPTION
The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristics, and is contained in a 4-pin minimold package which enables high-isolation gain.

FEATURES
• Low Noise
   NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
• High Power gain
S21e2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
• Maximum available power gain: MAG = 14.2 dB TYP.
   @ VCE = 10 V, IC = 20 mA, f = 1 GHz
• 4-pin minimold Package

View
2SC4093 [NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD ]

other parts : C4093  C4093-A  NE85639  2SC4093-A  NE85639-A  C4093-T1-A  2SC4093-T1-A  NE85639-T1-A 

CEL
California Eastern Laboratories.

DESCRIPTION
The NE85639 / 2SC4093 is a NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristics, and is contained in a 4-pin minimold package which enables high-isolation gain.

FEATURES
• Low Noise
   NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
• High Power gain
|S21e|2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
• Maximum available power gain: MAG = 14.2 dB TYP.
   @ VCE = 10 V, IC = 20 mA, f = 1 GHz
• 4-pin minimold Package

View
2SC4093-A [NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD ]

other parts : C4093  2SC4093  C4093-A  NE85639  NE85639-A  C4093-T1-A  2SC4093-T1-A  NE85639-T1-A 

CEL
California Eastern Laboratories.

DESCRIPTION
The NE85639 / 2SC4093 is a NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristics, and is contained in a 4-pin minimold package which enables high-isolation gain.

FEATURES
• Low Noise
   NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
• High Power gain
|S21e|2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
• Maximum available power gain: MAG = 14.2 dB TYP.
   @ VCE = 10 V, IC = 20 mA, f = 1 GHz
• 4-pin minimold Package

View
2SC4093-T1 [NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD ]

other parts : C4093  2SC4093  C4093-T1 

Renesas
Renesas Electronics

DESCRIPTION
The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristics, and is contained in a 4-pin minimold package which enables high-isolation gain.

FEATURES
• Low Noise
   NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
• High Power gain
S21e2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
• Maximum available power gain: MAG = 14.2 dB TYP.
   @ VCE = 10 V, IC = 20 mA, f = 1 GHz
• 4-pin minimold Package

View
2SC4093-T1-A [NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD ]

other parts : C4093  2SC4093  C4093-A  NE85639  2SC4093-A  NE85639-A  C4093-T1-A  NE85639-T1-A 

CEL
California Eastern Laboratories.

DESCRIPTION
The NE85639 / 2SC4093 is a NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristics, and is contained in a 4-pin minimold package which enables high-isolation gain.

FEATURES
• Low Noise
   NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
• High Power gain
|S21e|2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
• Maximum available power gain: MAG = 14.2 dB TYP.
   @ VCE = 10 V, IC = 20 mA, f = 1 GHz
• 4-pin minimold Package

View
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