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2SD1899-Z

  

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Manufacturer Part no Description View
Kexin
KEXIN Industrial
2SD1899-Z NPN Silicon Epitaxial Transistor

Features
● Low VCE(sat).
● High hFE.

NEC
NEC => Renesas Technology
2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3



other parts : D1899-Z 
Renesas
Renesas Electronics
2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION
The 2SD1899-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.

FEATURES
• High hFE: hFE = 100 to 400
• Low VCE(sat): VCE(sat) ≤ 0.25 V


other parts : D1899-Z 
Transys-Electronics
Transys Electronics Limited
2SD1899-Z TO-252 Plastic-Encapsulated NPN Transistors

FEATURES
Power dissipation
       PCM: 2 W (Tamb=25℃)
Collector current
        ICM: 3 A
Collector-base voltage
      V(BR)CBO: 60 V
Operating and storage junction temperature range 
        TJ, Tstg: -55℃to +150℃


other parts : 2SD1899 
Iscsemi
Inchange Semiconductor
2SD1899-Z Silicon NPN Power Transistor

DESCRIPTION
• Low collector saturation voltage
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS
• High transition frequency applications


other parts : D1899-Z 
Twtysemi
TY Semiconductor
2SD1899-Z NPN Silicon Epitaxial Transistor

Features
● Low VCE(sat).
● High hFE.


other parts : D1899-Z 

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