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2SK2776

  

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2SK2776_1998 [TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ]

other parts : K2776_1998 

Toshiba
Toshiba

HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS

CHOPPER REGULATOR, DC−DC CONVERTER AND MOTOR DRIVE APPLICATIONS

● Low Drain−Source ON Resistance : RDS (ON) = 0.75 Ω (typ.)
● High Forward Transfer Admittance : |Yfs| = 7.0 S (typ.)
● Low Leakage Current : IDSS = 100 μA (Max) (VDS = 500 V)
● Enhancement-Mode : Vth = 2.0 ~ 4.0 V (VDS = 10 V, ID = 1 mA)

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2SK2776_2006 [TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ]

other parts : K2776_2006 

Toshiba
Toshiba

Chopper Regulator, DC−DC Converter and Motor Drive Applications

● Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.)
● High forward transfer admittance : |Yfs| = 7.0 S (typ.)
● Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
● Enhancement mode : Vth = 2.0 ~ 4.0 V (VDS = 10 V, ID = 1 mA)

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2SK2776 [TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ]

other parts : K2776  2SK2776Q  2SK2776_10 

Toshiba
Toshiba

Chopper Regulator, DC−DC Converter and Motor Drive Applications

● Low drain−source ON-resistance : RDS (ON) = 0.75 Ω (typ.)
● High forward transfer admittance : |Yfs| = 7.0 S (typ.)
● Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

View
2SK2776Q [TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ]

other parts : 2SK2776  K2776  2SK2776_10 

Toshiba
Toshiba

Chopper Regulator, DC−DC Converter and Motor Drive Applications

● Low drain−source ON-resistance : RDS (ON) = 0.75 Ω (typ.)
● High forward transfer admittance : |Yfs| = 7.0 S (typ.)
● Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

View
2SK2776_10 [TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ]

other parts : 2SK2776  K2776  2SK2776Q 

Toshiba
Toshiba

Chopper Regulator, DC−DC Converter and Motor Drive Applications

● Low drain−source ON-resistance : RDS (ON) = 0.75 Ω (typ.)
● High forward transfer admittance : |Yfs| = 7.0 S (typ.)
● Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

View
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