Integrated circuits, Transistor, Semiconductors Free Datasheet Search and Download Site

ACE2341BBM-H

  

Даташит

соответствуя,
Like
 ACE2341BBM-H
начиная N/A
концы N/A
включая N/A
Просмотреть подробности    
ACE2341BBM-H [P-Channel Enhancement Mode Field Effect Transistor ]

other parts : ACE2341B  ACE2341BBM 

ACE
ACE Technology Co., LTD.

Description
The ACE2341B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation gate voltages as low as 1.8V. This device is suitable for use as a load switch or other general applications.

Features
• VDS=-20V, ID=-4.1A
• RDS(ON)<65mΩ @ VGS=-4.5V
• RDS(ON)<85mΩ @ VGS=-2.5V
• RDS(ON)<125mΩ @ VGS=-1.8V

 

View
1
Share Link : 

HOME




Language : English   한국어     日本語     简体中文     español
@ 2015 - 2018  [ Home ][ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]