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AO4606

  

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AO4609 [P & N-Channel 30-V (D-S) MOSFET ]

other parts : AM4528C-T1  AM4528C-T1-PF  MC4609 

Freescale
Freescale Semiconductor

P & N-Channel  30-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize High Cell Density process.  Low rDS(on)
assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.  Typical applications are PWM DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.

•    Low rDS(on) Provides Higher Efficiency and Extends Battery Life
•    Miniature SO-8 Surface Mount Package Saves Board Space
•    High power and current handling capability
•    Low side high current DC-DC Converter applications

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AO4603 [Complementary Enhancement Mode Field Effect Transistor ]

other parts : AO4603L 

Atmel
Atmel Corporation

General Description
The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony 259 specifications). AO4603L is a Green Product ordering option. AO4603 and AO4603L are electrically identical.

Features
n-channel                  p-channel
VDS (V) = 30V            -30V
ID = 4.7A (VGS=10V)    -5.8A (VGS = -10V)
RDS(ON)                     RDS(ON)
< 55mΩ (VGS=10V)      < 35mΩ (VGS = -10V)
< 70mΩ (VGS=4.5V)     < 58mΩ (VGS = -4.5V)
< 110mΩ (VGS = 2.5V)

 

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AO4606 [Complementary Enhancement Mode Field Effect Transistor ] ETC
Unspecified

[Alpha & Omega Semiconductor, Ltd.]

General Description
The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch,and for a host of other applications.

Features
   n-channel                                   p-channel
   VDS (V) = 30V                           -30V
   ID = 6.9A                                    -6A
   RDS(ON)                                    RDS(ON)
   < 28mΩ (VGS=10V)                   < 35mΩ (VGS = 10V)
   < 42mΩ (VGS=4.5V)                  < 58mΩ (VGS = 4.5V)

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AO4606 [Complementary Enhancement Mode Field Effect Transistor ] SHENZHENFREESCALE
Unspecified

General Description
The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch,and for a host of other applications.

Features
   n-channel                                   p-channel
   VDS (V) = 30V                           -30V
   ID = 6.9A                                    -6A
   RDS(ON)                                    RDS(ON)
   < 28mΩ (VGS=10V)                   < 35mΩ (VGS = 10V)
   < 42mΩ (VGS=4.5V)                  < 58mΩ (VGS = 4.5V)

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AO4603 [Complementary Enhancement Mode Field Effect Transistor ]

other parts : AO4603L 

AOSMD
Alpha and Omega Semiconductor

General Description
The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony 259 specifications). AO4603L is a Green Product ordering option. AO4603 and AO4603L are electrically identical.

Features
n-channel                  p-channel
VDS (V) = 30V            -30V
ID = 4.7A (VGS=10V)    -5.8A (VGS = -10V)
RDS(ON)                     RDS(ON)
< 55mΩ (VGS=10V)      < 35mΩ (VGS = -10V)
< 70mΩ (VGS=4.5V)     < 58mΩ (VGS = -4.5V)
< 110mΩ (VGS = 2.5V)

 

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AO4606 [Complementary Trench MOSFET ]

other parts : KO4606 

Kexin
KEXIN Industrial

■ Features
● N-Channel:
   VDS=30V ID=6A
   RDS(ON) < 30mΩ (VGS = 10V)
   RDS(ON) < 42mΩ (VGS = 4.5V)
● P-Channel:
   VDS=-30V ID=-6.5A
   RDS(ON) < 28mΩ (VGS =-10V)
   RDS(ON) < 44mΩ (VGS =-4.5V)

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AO4606 [30V Complementary MOSFET ] AOSMD
Alpha and Omega Semiconductor

General Description
The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Product Summary
   N-Channel                                         P-Channel
   VDS= 30V                                         -30V
   ID= 6A (VGS=10V)                           -6.5A (VGS=-10V)
   RDS(ON)                                          RDS(ON)
   < 30mΩ (VGS=10V)                         < 28mΩ (VGS=-10V)
   < 42mΩ (VGS=4.5V)                        < 44mΩ (VGS=-4.5V)
  
   100% UIS Tested 100% UIS Tested
   100% Rg Tested 100% Rg Tested

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AO4600 [Complementary Enhancement Mode Field Effect Transistor ]

other parts : AO4600L 

SHENZHENFREESCALE
Unspecified

General Description
The AO4600 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications). AO4600L is a Green Product ordering option. AO4600 and AO4600L are electrically identical.

Features
n-channel                           p-channel
VDS (V) = 30V                        -30V
ID = 6.9A (VGS = 10V)            -5A (VGS = -10V)
RDS(ON)
< 27mΩ                               < 49mΩ (VGS =- 10V)
< 32mΩ                               < 64mΩ (VGS =- 4.5V)
< 50mΩ                              < 120mΩ (VGS = -2.5V)

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AO4607 [Complementary Enhancement Mode Field Effect Transistor ]

other parts : AO4607L 

SHENZHENFREESCALE
Unspecified

General Description
The AO4607 uses advanced trench technology MOSFETs to provide excellenRDS(ON)and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n channel FET to minimize body diode losses. AO4607 is Pb-free (meets ROHS & Sony 259 specifications). AO4607L is a Green Product ordering option. AO4607 and AO4607L are electrically identical.

Features
n-channel p-channel
VDS(V) = 30V -30V
ID= 6.9A (VGS=10V) -6A (VGS=1-0V)
RDS(ON)  RDS(ON)
< 28mΩ(VGS=10V) < 35mΩ(VGS= -10V)
< 42mΩ(VGS=4.5V) < 58mΩ(VGS=-4.5V)

SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A

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AO4603 [Complementary Enhancement Mode Field Effect Transistor ] SHENZHENFREESCALE
Unspecified

General Description
The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony 259 specifications). AO4603L is a Green Product ordering option. AO4603 and AO4603L are electrically identical.

Features
n-channel                        p-channel
VDS (V) = 30V                  -30V
ID = 4.7A (VGS=10V)         -5.8A (VGS = -10V)
RDS(ON)                          RDS(ON)
< 55mΩ (VGS=10V)           < 35mΩ (VGS = -10V)
< 70mΩ (VGS=4.5V)           < 58mΩ (VGS = -4.5V)
< 110mΩ (VGS = 2.5V)

 

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