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AO4606

  

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AO4606 [30V Complementary MOSFET ] AOSMD
Alpha and Omega Semiconductor

General Description
The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Product Summary
   N-Channel                                         P-Channel
   VDS= 30V                                         -30V
   ID= 6A (VGS=10V)                           -6.5A (VGS=-10V)
   RDS(ON)                                          RDS(ON)
   < 30mΩ (VGS=10V)                         < 28mΩ (VGS=-10V)
   < 42mΩ (VGS=4.5V)                        < 44mΩ (VGS=-4.5V)
  
   100% UIS Tested 100% UIS Tested
   100% Rg Tested 100% Rg Tested

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AO4606 [Complementary Enhancement Mode Field Effect Transistor ] SHENZHENFREESCALE
Unspecified

General Description
The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch,and for a host of other applications.

Features
   n-channel                                   p-channel
   VDS (V) = 30V                           -30V
   ID = 6.9A                                    -6A
   RDS(ON)                                    RDS(ON)
   < 28mΩ (VGS=10V)                   < 35mΩ (VGS = 10V)
   < 42mΩ (VGS=4.5V)                  < 58mΩ (VGS = 4.5V)

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AO4606 [Complementary Trench MOSFET ]

other parts : KO4606 

Kexin
KEXIN Industrial

■ Features
● N-Channel:
   VDS=30V ID=6A
   RDS(ON) < 30mΩ (VGS = 10V)
   RDS(ON) < 42mΩ (VGS = 4.5V)
● P-Channel:
   VDS=-30V ID=-6.5A
   RDS(ON) < 28mΩ (VGS =-10V)
   RDS(ON) < 44mΩ (VGS =-4.5V)

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AO4606 [Complementary Enhancement Mode Field Effect Transistor ] ETC
Unspecified

[Alpha & Omega Semiconductor, Ltd.]

General Description
The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch,and for a host of other applications.

Features
   n-channel                                   p-channel
   VDS (V) = 30V                           -30V
   ID = 6.9A                                    -6A
   RDS(ON)                                    RDS(ON)
   < 28mΩ (VGS=10V)                   < 35mΩ (VGS = 10V)
   < 42mΩ (VGS=4.5V)                  < 58mΩ (VGS = 4.5V)

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