Features
• Power MOS V® MOSFETs
   - Low RDSon
   - Low input and Miller capacitance
   - Low gate charge
   - Fast intrinsic diode
   - Avalanche energy rated
   - Very rugged
• ISOTOP® Package (SOT-227)
• Very low stray inductance
• High level of integration

Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
• Brake switch

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Very rugged
• Low profile
• RoHS Compliant

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

• Faster Switching
• Lower Leakage
• Single Die MOSFET & FRED
• 100% Avalanche Tested
• Popular SOT-227 Package
• PFC "Boost" Configuration