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BAV70S

  

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BAV70S_2015 [High-speed switching diodes ]

other parts : BAV70_2015  BAV70M_2015  BAV70T_2015  BAV70W_2015  BAV70S115_2015 

NXP
NXP Semiconductors.

General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.

Features and benefits
■ High switching speed: trr ≤ 4 ns
■ Low capacitance: Cd ≤ 1.5 pF
■ Low leakage current
■ Reverse voltage: VR ≤ 100 V
■ Small SMD plastic packages
■ AEC-Q101 qualified

Applications
■ High-speed switching
■ General-purpose switching

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BAV70S [High-speed switching diodes ]

other parts : BAV70  BAV70M  BAV70T  BAV70W  BAV70S115 

NXP
NXP Semiconductors.

General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.

Features
■ High switching speed: trr ≤ 4 ns
■ Low capacitance: Cd ≤ 1.5 pF
■ Low leakage current
■ Reverse voltage: VR ≤ 100 V
■ Small SMD plastic packages

Applications
■ High-speed switching
■ General-purpose switching

View
BAV70S_2004 [Silicon Switching Diode ]

other parts : BAV70_2004  BAV70U_2004  BAV70F_2004  BAV70T_2004  BAV70W_2004  BAV70L3_2004 

Infineon
Infineon Technologies

Silicon Switching Diode

• For high-speed switching applications
• Common cathode configuration

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BAV70S [Silicon Switching Diode ]

other parts : BAV70  BAV70U  BAV70W  BAV70E6327  BAV70SH6327 

Infineon
Infineon Technologies

Silicon Switching Diode

• For high-speed switching applications
• Common cathode configuration
• BAV70S / U: For orientation in reel see
   package information below
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101

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BAV70S3 [High – speed double diode ] CYSTEKEC
Cystech Electonics Corp.

Description
The BAV70S3 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small SOT-323 plastic SMD package.

Features
• Small plastic SMD package
• High switching speed: max. 4ns
• Continuous reverse voltage: max. 75V
• Repetitive peak reverse voltage: max. 85V
• Repetitive peak forward current: max. 450mA.

Applications
• High-speed switching in thick and thin-film circuits.

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BAV70S115_2015 [High-speed switching diodes ]

other parts : BAV70_2015  BAV70M_2015  BAV70S_2015  BAV70T_2015  BAV70W_2015 

NXP
NXP Semiconductors.

General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.

Features and benefits
■ High switching speed: trr ≤ 4 ns
■ Low capacitance: Cd ≤ 1.5 pF
■ Low leakage current
■ Reverse voltage: VR ≤ 100 V
■ Small SMD plastic packages
■ AEC-Q101 qualified

Applications
■ High-speed switching
■ General-purpose switching

View
BAV70S115 [High-speed switching diodes ]

other parts : BAV70  BAV70M  BAV70S  BAV70T  BAV70W 

NXP
NXP Semiconductors.

General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.

Features
■ High switching speed: trr ≤ 4 ns
■ Low capacitance: Cd ≤ 1.5 pF
■ Low leakage current
■ Reverse voltage: VR ≤ 100 V
■ Small SMD plastic packages

Applications
■ High-speed switching
■ General-purpose switching

View
BAV70SH6327 [Silicon Switching Diode ]

other parts : BAV70  BAV70S  BAV70U  BAV70W  BAV70E6327 

Infineon
Infineon Technologies

Silicon Switching Diode

• For high-speed switching applications
• Common cathode configuration
• BAV70S / U: For orientation in reel see
   package information below
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101

View
BAV70S [Silicon Switching Diode Array ]

other parts : Q62702-A1097 

Siemens
Siemens AG

Silicon Switching Diode Array

• For high speed switching applications
• Common cathode
• Internal (galvanic) isolated Diodes Arrays
    in one package

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BAV70S [High-Speed Double Diode Array ] Kexin
KEXIN Industrial

Features
● Small plastic SMD package
● High switching speed: max. 4 ns
● Continuous reverse voltage:max. 75 V
● Repetitive peak reverse voltage:max. 85 V
● Repetitive peak forward current:max. 450 mA.

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