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BD135

  

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BD135 [NPN power transistor. ]

other parts : BD137  BD139  BD135-10  BD135-16  BD137-10  BD137-16  BD139-10  BD139-16 

Philips
Philips Electronics

DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic package. PNP complements: BD136, BD138 and BD140

FEATURES
• High current (max. 1.5 A)
• Low voltage (max. 80 V).

APPLICATIONS
• Driver stages in hi-fi amplifiers and television circuits.

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BD135 [NPN Epitaxial Silicon Transistor ]

other parts : BD139  BD137  BD135-6  BD139-6  BD137-16  BD137-10  BD139-10  BD13516S  BD13716S  BD135-10 

Fairchild
Fairchild Semiconductor

Features
• Complement to BD136, BD138 and BD140 respectively

Applications
• Medium Power Linear and Switching

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BD135 [Silicon NPN Power Transistors ]

other parts : BD137  BD139 

Savantic
SavantIC Semiconductor

DESCRIPTION
• With TO-126 package
• High current
• Complement to type BD136/138/140

APPLICATIONS
• Driver stages in high-fidelity amplifiers
    and television circuits

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BD135_2003 [Power Transistors NPN Silicon 45,60,80 Volts ]

other parts : BD137_2003  BD139_2003 

MCC
Micro Commercial Components

Features
• DC Current Gain - hFE = 40 (Min) @IC = 150mAdc
• Complementary with BD136, BD138, BD140

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BD135 [Power Transistors NPN Silicon 45,60,80 Volts ]

other parts : BD137  BD139  BD135-BP  BD137-BP  BD139-BP 

MCC
Micro Commercial Components

Features
• Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
    RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• DC Current Gain - hFE = 40 (Min) @IC = 150mAdc
• Complementary with BD136, BD138, BD140

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BD135 [TO-126 Plastic-Encapsulated Transistors ]

other parts : BD137  BD139 

TEL
Transys Electronics Limited

TRANSISTOR (NPN)

FEATURES
    Power dissipation
        PCM: 1.25 W (Tamb=25℃)
    Collector current
        ICM: 1.5 A
    Operating and storage junction temperature range
        TJ, Tstg: -55℃ to +150℃

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BD135-6 [NPN Epitaxial Silicon Transistor ]

other parts : BD135  BD137  BD139  BD139-6  BD13716S  BD13516S  BD135-16  BD135-10  BD137-16  BD139-10 

Fairchild
Fairchild Semiconductor

Features
• Complement to BD136, BD138 and BD140 respectively

Applications
• Medium Power Linear and Switching

View
BD135-10 [NPN power transistor. ]

other parts : BD135  BD137  BD139  BD135-16  BD137-10  BD137-16  BD139-10  BD139-16 

Philips
Philips Electronics

DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic package. PNP complements: BD136, BD138 and BD140

FEATURES
• High current (max. 1.5 A)
• Low voltage (max. 80 V).

APPLICATIONS
• Driver stages in hi-fi amplifiers and television circuits.

View
BD135-10 [NPN Epitaxial Silicon Transistor ]

other parts : BD135  BD137  BD139  BD135-6  BD139-6  BD13716S  BD13516S  BD135-16  BD137-16  BD139-10 

Fairchild
Fairchild Semiconductor

Features
• Complement to BD136, BD138 and BD140 respectively

Applications
• Medium Power Linear and Switching

View
BD135-16 [NPN power transistor. ]

other parts : BD135  BD137  BD139  BD135-10  BD137-10  BD137-16  BD139-10  BD139-16 

Philips
Philips Electronics

DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic package. PNP complements: BD136, BD138 and BD140

FEATURES
• High current (max. 1.5 A)
• Low voltage (max. 80 V).

APPLICATIONS
• Driver stages in hi-fi amplifiers and television circuits.

View
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