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BF1201

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BF1201 [N-channel dual-gate PoLo MOS-FETs ]

other parts : BF1201R  BF1201WR 

Philips
Philips Electronics

DESCRIPTION
Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.
  
FEATURES
• Short channel transistor with high
    forward transfer admittance to input
    capacitance ratio
• Low noise gain controlled amplifier
• Partly internal self-biasing circuit to
    ensure good cross-modulation
    performance during AGC and good
    DC stabilization.
  
APPLICATIONS
• VHF and UHF applications with
    3 to 9 V supply voltage, such as
    digital and analogue television
    tuners and professional
    communications equipment.
  

View
BF1201R [N-channel dual-gate PoLo MOS-FETs ]

other parts : BF1201  BF1201WR 

Philips
Philips Electronics

DESCRIPTION
Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.
  
FEATURES
• Short channel transistor with high
    forward transfer admittance to input
    capacitance ratio
• Low noise gain controlled amplifier
• Partly internal self-biasing circuit to
    ensure good cross-modulation
    performance during AGC and good
    DC stabilization.
  
APPLICATIONS
• VHF and UHF applications with
    3 to 9 V supply voltage, such as
    digital and analogue television
    tuners and professional
    communications equipment.
  

View
BF1201WR [N-channel dual-gate PoLo MOS-FETs ]

other parts : BF1201  BF1201R 

Philips
Philips Electronics

DESCRIPTION
Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.
  
FEATURES
• Short channel transistor with high
    forward transfer admittance to input
    capacitance ratio
• Low noise gain controlled amplifier
• Partly internal self-biasing circuit to
    ensure good cross-modulation
    performance during AGC and good
    DC stabilization.
  
APPLICATIONS
• VHF and UHF applications with
    3 to 9 V supply voltage, such as
    digital and analogue television
    tuners and professional
    communications equipment.
  

View
1


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