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BFG25A/X

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BFG25A/X [NPN 5 GHz wideband transistor ] NXP
NXP Semiconductors.

DESCRIPTION
NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter).

FEATURES
• Low current consumption
    (100 µA to 1 mA)
• Low noise figure
• Gold metallization ensures
    excellent reliability.

APPLICATIONS
• RF low power amplifiers, such as
    pocket telephones, paging
    systems, with signal frequencies
    up to 2 GHz.

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BFG25A/X [NPN 5 GHz wideband transistor ] Philips
Philips Electronics

DESCRIPTION
NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter).

FEATURES
• Low current consumption
    (100 µA to 1 mA)
• Low noise figure
• Gold metallization ensures
    excellent reliability.

APPLICATIONS
• RF low power amplifiers, such as
    pocket telephones, paging
    systems, with signal frequencies
    up to 2 GHz.

View
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