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BFG540

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BFG540W [NPN 9 GHz wideband transistor ]

other parts : BFG540W-X  BFG540W/X  BFG540W-XR  BFG540W/XR 

Philips
Philips Electronics

DESCRIPTION
NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages.

FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

APPLICATIONS
  They are intended for applications in the RF front end, in wideband applications in the GHz range such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.

 

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BFG540W [NPN 9 GHz wideband transistor ]

other parts : BFG540W-X  BFG540W/X  BFG540W-XR  BFG540W/XR 

NXP
NXP Semiconductors.

DESCRIPTION
NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages.

FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

APPLICATIONS
  They are intended for applications in the RF front end, in wideband applications in the GHz range such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.

 

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BFG540W-X [NPN 9 GHz wideband transistor ]

other parts : BFG540W  BFG540W/X  BFG540W-XR  BFG540W/XR 

Philips
Philips Electronics

DESCRIPTION
NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages.

FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

APPLICATIONS
  They are intended for applications in the RF front end, in wideband applications in the GHz range such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.

 

View
BFG540W-X [NPN 9 GHz wideband transistor ]

other parts : BFG540W  BFG540W/X  BFG540W-XR  BFG540W/XR 

NXP
NXP Semiconductors.

DESCRIPTION
NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages.

FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

APPLICATIONS
  They are intended for applications in the RF front end, in wideband applications in the GHz range such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.

 

View
BFG540W/X [NPN 9 GHz wideband transistor ]

other parts : BFG540W  BFG540W-X  BFG540W-XR  BFG540W/XR 

Philips
Philips Electronics

DESCRIPTION
NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages.

FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

APPLICATIONS
  They are intended for applications in the RF front end, in wideband applications in the GHz range such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.

 

View
BFG540W/X [NPN 9 GHz wideband transistor ]

other parts : BFG540W  BFG540W-X  BFG540W-XR  BFG540W/XR 

NXP
NXP Semiconductors.

DESCRIPTION
NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages.

FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

APPLICATIONS
  They are intended for applications in the RF front end, in wideband applications in the GHz range such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.

 

View
BFG540W-XR [NPN 9 GHz wideband transistor ]

other parts : BFG540W  BFG540W-X  BFG540W/X  BFG540W/XR 

Philips
Philips Electronics

DESCRIPTION
NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages.

FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

APPLICATIONS
  They are intended for applications in the RF front end, in wideband applications in the GHz range such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.

 

View
BFG540W-XR [NPN 9 GHz wideband transistor ]

other parts : BFG540W  BFG540W-X  BFG540W/X  BFG540W/XR 

NXP
NXP Semiconductors.

DESCRIPTION
NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages.

FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

APPLICATIONS
  They are intended for applications in the RF front end, in wideband applications in the GHz range such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.

 

View
BFG540W/XR [NPN 9 GHz wideband transistor ]

other parts : BFG540W  BFG540W-X  BFG540W/X  BFG540W-XR 

Philips
Philips Electronics

DESCRIPTION
NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages.

FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

APPLICATIONS
  They are intended for applications in the RF front end, in wideband applications in the GHz range such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.

 

View
BFG540W/XR [NPN 9 GHz wideband transistor ]

other parts : BFG540W  BFG540W-X  BFG540W/X  BFG540W-XR 

NXP
NXP Semiconductors.

DESCRIPTION
NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages.

FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

APPLICATIONS
  They are intended for applications in the RF front end, in wideband applications in the GHz range such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.

 

View
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