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BFG590

  

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BFG590 [NPN 5 GHz wideband transistors ]

other parts : BFG590-X  BFG590/X 

NXP
NXP Semiconductors.

DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package.

FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

APPLICATIONS
• MATV/CATV amplifiers and RF communications
    subscriber equipment in the GHz range
• Ideally suitable for use in class-A, (A)B and C amplifiers
    with either pulsed or continuous drive.

View
BFG590 [NPN 5 GHz wideband transistors ]

other parts : BFG590-X  BFG590/X 

Philips
Philips Electronics

DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package.

FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

APPLICATIONS
• MATV/CATV amplifiers and RF communications
    subscriber equipment in the GHz range
• Ideally suitable for use in class-A, (A)B and C amplifiers
    with either pulsed or continuous drive.

View
BFG590-X [NPN 5 GHz wideband transistors ]

other parts : BFG590  BFG590/X 

NXP
NXP Semiconductors.

DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package.

FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

APPLICATIONS
• MATV/CATV amplifiers and RF communications
    subscriber equipment in the GHz range
• Ideally suitable for use in class-A, (A)B and C amplifiers
    with either pulsed or continuous drive.

View
BFG590-X [NPN 5 GHz wideband transistors ]

other parts : BFG590  BFG590/X 

Philips
Philips Electronics

DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package.

FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

APPLICATIONS
• MATV/CATV amplifiers and RF communications
    subscriber equipment in the GHz range
• Ideally suitable for use in class-A, (A)B and C amplifiers
    with either pulsed or continuous drive.

View
BFG590/X [NPN 5 GHz wideband transistors ]

other parts : BFG590  BFG590-X 

NXP
NXP Semiconductors.

DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package.

FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

APPLICATIONS
• MATV/CATV amplifiers and RF communications
    subscriber equipment in the GHz range
• Ideally suitable for use in class-A, (A)B and C amplifiers
    with either pulsed or continuous drive.

View
BFG590/X [NPN 5 GHz wideband transistors ]

other parts : BFG590  BFG590-X 

Philips
Philips Electronics

DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package.

FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

APPLICATIONS
• MATV/CATV amplifiers and RF communications
    subscriber equipment in the GHz range
• Ideally suitable for use in class-A, (A)B and C amplifiers
    with either pulsed or continuous drive.

View
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