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BFP181

  

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BFP181_2001 [Low Noise Silicon Bipolar RF Transistor ] Infineon
Infineon Technologies

NPN Silicon RF Transistor

• For low-noise, high-gain broadband amplifiers at
   collector currents from 0.5 mA to 12 mA
• fT = 8 GHz
   F = 1.45 dB at 900 MHz

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BFP181_2007 [Low Noise Silicon Bipolar RF Transistor ] Infineon
Infineon Technologies

NPN Silicon RF Transistor

• For low noise, high-gain broadband amplifiers at
   collector currents from 0.5 mA to 12 mA
• fT = 8 GHz, F = 0.9 dB at 900 MHz
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
* Short term description

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BFP181T_1999 [Silicon NPN Planar RF Transistor ]

other parts : BFP181TW_1999  BFP181TRW_1999 

Vishay
Vishay Semiconductors

Features
● Low noise figure
● High power gain

Applications
   For low noise and high gain broadband amplifiers at
   collector currents from 0.5 mA to 12 mA.

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BFP181T [Silicon NPN Planar RF Transistor ]

other parts : BFP181TW  BFP181TRW 

Vishay
Vishay Semiconductors

Features
• Low noise figure
• High power gain
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
   and WEEE 2002/96/EC

Applications
   For low noise and high gain broadband amplifiers at
   collector currents from 0.5 mA to 12 mA.

View
BFP181TW_1999 [Silicon NPN Planar RF Transistor ]

other parts : BFP181T_1999  BFP181TRW_1999 

Vishay
Vishay Semiconductors

Features
● Low noise figure
● High power gain

Applications
   For low noise and high gain broadband amplifiers at
   collector currents from 0.5 mA to 12 mA.

View
BFP181TW [Silicon NPN Planar RF Transistor ]

other parts : BFP181T  BFP181TRW 

Vishay
Vishay Semiconductors

Features
• Low noise figure
• High power gain
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
   and WEEE 2002/96/EC

Applications
   For low noise and high gain broadband amplifiers at
   collector currents from 0.5 mA to 12 mA.

View
BFP181TRW_1999 [Silicon NPN Planar RF Transistor ]

other parts : BFP181T_1999  BFP181TW_1999 

Vishay
Vishay Semiconductors

Features
● Low noise figure
● High power gain

Applications
   For low noise and high gain broadband amplifiers at
   collector currents from 0.5 mA to 12 mA.

View
BFP181TRW [Silicon NPN Planar RF Transistor ]

other parts : BFP181T  BFP181TW 

Vishay
Vishay Semiconductors

Features
• Low noise figure
• High power gain
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
   and WEEE 2002/96/EC

Applications
   For low noise and high gain broadband amplifiers at
   collector currents from 0.5 mA to 12 mA.

View
BFP181 [NPN Silicon RF Transistor ]

other parts : Q62702-F1271 

Siemens
Siemens AG

NPN Silicon RF Transistor

• For low noise, high-gain broadband amplifiers at
   collector currents from 0.5mA to 12mA
• fT = 8GHz
   F = 1.45dB at 900MHz

View
BFP181R [NPN Silicon RF Transistor ] Infineon
Infineon Technologies

NPN Silicon RF Transistor

• For low noise, high-gain broadband amplifiers at
   collector currents from 0.5 mA to 12 mA
• fT = 8 GHz
   F = 1.45 dB at 900 MHz

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