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BUK7535-55

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BUK7535-55A [N-channel TrenchMOS standard level FET ] NXP
NXP Semiconductors.

General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features and benefits
■ AEC Q101 compliant
■ Low conduction losses due to low on-state resistance
■ Suitable for standard level gate drive sources
■ Suitable for thermally demanding environments due to 175 °C rating

Applications
■ 12 V and 24 V loads
■ Automotive and general purpose power switching
■ Motors, lamps and solenoids

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BUK7535-55 [TrenchMOS™ transistor Standard level FET ] Philips
Philips Electronics

GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications.

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BUK7535-55A [TrenchMOS™ standard level FET ]

other parts : BUK7635-55A 

Philips
Philips Electronics

Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

Features
■ TrenchMOS™ technology
■ Q101 compliant
■ 175 °C rated
■ Standard level compatible.

Applications
■ Automotive and general purpose power switching:
    ◆ 12 V and 24 V loads
    ◆ Motors, lamps and solenoids.

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