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BUT211

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BUT211X [Silicon NPN Power Transistor ] Iscsemi
Inchange Semiconductor

DESCRIPTION
• Collector-Emitter Sustaining Voltage-
    : VCEO(SUS)= 400V(Min.)
• High Speed Switching
   
APPLICATIONS
• Designed for high frequency electronic lighting ballast
    applications.

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BUT211 [Silicon Diffused Power Transistor ] Philips
Philips Electronics

GENERAL DESCRIPTION
Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications.
   

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BUT211 [Silicon NPN Power Transistor ] Iscsemi
Inchange Semiconductor

DESCRIPTION
• Collector-Emitter Sustaining Voltage-
    : VCEO(SUS)= 400V(Min.)
• High Speed Switching

APPLICATIONS
• Designed for high frequency electronic lighting ballast
    applications.
   

View
BUT211X [Silicon Diffused Power Transistor ] Philips
Philips Electronics

GENERAL DESCRIPTION
Enhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelope specially suited for high frequency electronic lighting ballast applications.
   

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