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BUZ31

  

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BUZ31 [SIPMOS® Power Transistor ]

other parts : C67078-S1304-A2  C67078-S.1304-A2 

Infineon
Infineon Technologies

SIPMOS® Power Transistor

• N channel
• Enhancement mode
• Avalanche-rated

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BUZ311 [SIPMOS® Power Transistor ]

other parts : C67078-A3102-A2 

Siemens
Siemens AG

• N channel
• Enhancement mode

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BUZ31H [SIPMOS® Power Transistor ] Infineon
Infineon Technologies

SIPMOS® Power Transistor

• N channel
• Enhancement mode
• Avalanche-rated
• Normal Level
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21

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BUZ31LH [SIPMOS® Power Transistor ] Infineon
Infineon Technologies

SIPMOS® Power Transistor

• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21

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BUZ31H3046 [SIPMOS® Power Transistor ] Infineon
Infineon Technologies

SIPMOS® Power Transistor

• N channel
• Enhancement mode
• Avalanche-rated
• Normal Level
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21

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BUZ31 [SIPMOS Power Transistor ] NJSEMI
New Jersey Semiconductor

SIPMOS Power Transistor

• N channel
• Enhancement mode
• Avalanche-rated

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BUZ31 [N-Channel MOSFET Transistor ] Iscsemi
Inchange Semiconductor

DESCRIPTION
• Static Drain-Source On-Resistance
   : RDS(on) = 0.2Ω(Max)
• High current capability
• 175℃ operating temperature

APPLICATIONS
• High current , high speed switching
• Solenoid and relay drivers
• DC-DC & DC-AC converters

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BUZ31 [POWER MOS TRANSISTORS ] Comset
Comset Semiconductors

FEATURE
• Nchannel
• Enhancement mode
• Avalanche-rated
• TO-220 envelope
• Compliance to RoHS.

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