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FCA20N60

  

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FCA20N60_2008 [600V N-Channel MOSFET ]

other parts : FCA20N60_F109_2008  FCH20N60_2008 

Fairchild
Fairchild Semiconductor

Description
SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features
• 650V @TJ = 150°C
• Typ. Rds(on)=0.15Ω
• Ultra low gate charge (typ. Qg=55nC)
• Low effective output capacitance (typ. Coss.eff=110pF)
• 100% avalanche tested

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FCA20N60 [600V N-Channel MOSFET ]

other parts : FCH20N60  FCA20N60_F109  FCA20N60-F109 

Fairchild
Fairchild Semiconductor

Description
SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features
• 650V @TJ = 150°C
• Typ. Rds(on)=0.15Ω
• Ultra low gate charge (typ. Qg=55nC)
• Low effective output capacitance (typ. Coss.eff=110pF)
• 100% avalanche tested

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FCA20N60S [600V N-Channel MOSFET ]

other parts : FCA20N60S_F109  FCA20N60S-F109 

Fairchild
Fairchild Semiconductor

Description
SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features
• 650V @TJ = 150°C
• Typ. Rds(on)=0.22Ω
• Ultra low gate charge (typ. Qg=55nC)
• Low effective output capacitance (typ. Coss.eff=110pF)
• 100% avalanche tested

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FCA20N60FS [DESIGN/PROCESS CHANGE NOTIFICATION ]

other parts : FCBB20CH60SF  FCPF11N65  FCPF11N65-G  FCPF20N60FS  FCPF20N60S  FCPF20N60ST  FCPF20N60ST-G  FDPF9N50NZ  FGA40N65SMD  FGPF4533RDTU 

Fairchild
Fairchild Semiconductor
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FCA20N60F109 [600V N-Channel MOSFET ] Fairchild
Fairchild Semiconductor

Description
SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features
• 650V @TJ = 150°C
• Typ. Rds(on)=0.15Ω
• Ultra low gate charge (typ. Qg=55nC)
• Low effective output capacitance (typ. Coss.eff=110pF)
• 100% avalanche tested

View
FCA20N60-F109 [600V N-Channel MOSFET ]

other parts : FCA20N60  FCH20N60  FCA20N60_F109 

Fairchild
Fairchild Semiconductor

Description
SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features
• 650V @TJ = 150°C
• Typ. Rds(on)=0.15Ω
• Ultra low gate charge (typ. Qg=55nC)
• Low effective output capacitance (typ. Coss.eff=110pF)
• 100% avalanche tested

View
FCA20N60_F109_2008 [600V N-Channel MOSFET ]

other parts : FCA20N60_2008  FCH20N60_2008 

Fairchild
Fairchild Semiconductor

Description
SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features
• 650V @TJ = 150°C
• Typ. Rds(on)=0.15Ω
• Ultra low gate charge (typ. Qg=55nC)
• Low effective output capacitance (typ. Coss.eff=110pF)
• 100% avalanche tested

View
FCA20N60_F109 [600V N-Channel MOSFET ]

other parts : FCA20N60  FCH20N60  FCA20N60-F109 

Fairchild
Fairchild Semiconductor

Description
SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features
• 650V @TJ = 150°C
• Typ. Rds(on)=0.15Ω
• Ultra low gate charge (typ. Qg=55nC)
• Low effective output capacitance (typ. Coss.eff=110pF)
• 100% avalanche tested

View
FCA20N60S-F109 [600V N-Channel MOSFET ]

other parts : FCA20N60S_F109  FCA20N60S 

Fairchild
Fairchild Semiconductor

Description
SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features
• 650V @TJ = 150°C
• Typ. Rds(on)=0.22Ω
• Ultra low gate charge (typ. Qg=55nC)
• Low effective output capacitance (typ. Coss.eff=110pF)
• 100% avalanche tested

View
FCA20N60S_F109 [600V N-Channel MOSFET ]

other parts : FCA20N60S  FCA20N60S-F109 

Fairchild
Fairchild Semiconductor

Description
SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features
• 650V @TJ = 150°C
• Typ. Rds(on)=0.22Ω
• Ultra low gate charge (typ. Qg=55nC)
• Low effective output capacitance (typ. Coss.eff=110pF)
• 100% avalanche tested

View
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