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FCD5N60

  

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FCD5N60 [600V N-Channel MOSFET ]

other parts : FCD5N60TF  FCD5N60TM  FCU5N60  FCU5N60TU 

Fairchild
Fairchild Semiconductor

Description
SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features
• 650V @TJ = 150°C
• Typ. Rds(on)=0.81Ω
• Ultra low gate charge (typ. Qg=16nC)
• Low effective output capacitance (typ. Coss.eff=32pF)
• 100% avalanche tested

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FCD5N60TF [600V N-Channel MOSFET ]

other parts : FCD5N60  FCD5N60TM  FCU5N60  FCU5N60TU 

Fairchild
Fairchild Semiconductor

Description
SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features
• 650V @TJ = 150°C
• Typ. Rds(on)=0.81Ω
• Ultra low gate charge (typ. Qg=16nC)
• Low effective output capacitance (typ. Coss.eff=32pF)
• 100% avalanche tested

View
FCD5N60TM [600V N-Channel MOSFET ]

other parts : FCD5N60  FCD5N60TF  FCU5N60  FCU5N60TU 

Fairchild
Fairchild Semiconductor

Description
SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features
• 650V @TJ = 150°C
• Typ. Rds(on)=0.81Ω
• Ultra low gate charge (typ. Qg=16nC)
• Low effective output capacitance (typ. Coss.eff=32pF)
• 100% avalanche tested

View
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