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FCPF190N60E_F152

  

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FCPF190N60E_F152 [N-Channel SuperFET® II MOSFET 600 V, 20.6 A, 190 mΩ ] Fairchild
Fairchild Semiconductor

Description
SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET®II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.

Features
• 650 V @TJ = 150°C
• Max. RDS(on) = 190 mΩ
• Ultra Low Gate Charge (Typ. Qg = 63 nC)
• Low Effective Output Capacitance (Typ. Coss.eff = 178 pF)
• 100% Avalanche Tested

Aplications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply

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