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FDN336P

  

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FDN336P_1998 [Single P-Channel 2.5V Specified PowerTrench® MOSFET ] Fairchild
Fairchild Semiconductor

General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Features
■ -1.3 A, -20 V. RDS(ON) = 0.20 W @ VGS = -4.5 V
                          RDS(ON) = 0.27 W @ VGS= -2.5 V.
■ Low gate charge (3.6 nC typical).
■ High performance trench technology for extremely low
   RDS(ON).
■ High power version of industry standard SOT-23 package.
■ Identical pin out to SOT-23 with 30% higher power handling
   capability.

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FDN336P [Single P-Channel 2.5V Specified PowerTrench® MOSFET ] Fairchild
Fairchild Semiconductor

General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion.

Features
• –1.3 A, –20 V. RDS(ON) = 0.20 Ω @ VGS = –4.5 V
                          RDS(ON) = 0.27 Ω @ VGS = –2.5 V
• Low gate charge (3.6 nC typical)
• High performance trench technology for extremely
   low RDS(ON)
• SuperSOTTM -3 provides low RDS(ON) and 30%
   higher power handling capability than SOT23 in
   the same footprint

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