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FDN338P

  

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FDN338P [P-Channel 2.5V Specified PowerTrench® MOSFET ]

other parts : FDN338 

Fairchild
Fairchild Semiconductor

General Description
This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Features
· –1.6 A, –20 V. RDS(ON) = 115 mW @ VGS = –4.5 V
                     RDS(ON) = 155 mW @ VGS = –2.5 V
· Fast switching speed
· High performance trench technology for extremely low RDS(ON)
· SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

Applications
· Battery management
· Load switch
· Battery protection

 

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FDN338P [20V P-Channel Enhancement Mode MOSFET ] HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.

VDS= -20V
RDS(ON), Vgs@-4.5V, Ids@-1.6A= 115mΩ
RDS(ON), Vgs@-2.5V, Ids@-1.3A= 155mΩ

Features
  Advanced trench process technology
  High Density Cell Design For Ultra Low On-Resistance

 

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