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FDN352AP

  

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FDN352AP [Single P-Channel, PowerTrench® MOSFET ] Fairchild
Fairchild Semiconductor

General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features
■ –1.3 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V
   –1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V
■ High performance trench technology for extremely low RDS(ON).
■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability.

Applications
■ Notebook computer power management

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FDN352AP [P-Channel MOSFET ]

other parts : KDN352AP 

Kexin
KEXIN Industrial

■ Features
● VDS (V) =-30V
● ID =-1.3 A (VGS =-10V)
● RDS(ON) < 180mΩ (VGS =-10V)
● RDS(ON) < 300mΩ (VGS =-4.5V)

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FDN352AP [P-Channel Logic Level MOSFET ] Twtysemi
TY Semiconductor

General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features
■ –1.3 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V
   –1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V
■ High performance trench technology for extremely low RDS(ON).
■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability.

Applications
■ Notebook computer power management

View
FDN352AP-HF [P-Channel MOSFET ]

other parts : KDN352AP-HF 

Kexin
KEXIN Industrial

■ Features
● VDS (V) =-30V
● ID =-1.3 A (VGS =-10V)
● RDS(ON) < 180mΩ (VGS =-10V)
● RDS(ON) < 300mΩ (VGS =-4.5V)
● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

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