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FDP18N20F

  

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FDP18N20F [N-Channel MOSFET 200V, 18A, 0.14Ω ]

other parts : FDPF18N20FT 

Fairchild
Fairchild Semiconductor

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.

Features
• RDS(on) = 0.12Ω ( Typ.)@ VGS = 10V, ID = 9A
• Low gate charge ( Typ. 20nC)
• Low Crss ( Typ. 24pF)
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant

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FDP18N20F_ [DESIGN/PROCESS CHANGE NOTIFICATION ]

other parts : FCP7N60_  SN00006_  SN00201_  FCI7N60_  SN00007_  SN00171_  FCP4N60_  FCA20N60_  FCH47N60_  FCP16N60_ 

Fairchild
Fairchild Semiconductor

DESIGN/PROCESS CHANGE NOTIFICATION

This is to inform you that a change is being made to the products listed below.
Unless otherwise indicated in the details of this notification, the identified change will have no impact on product quality, reliability, electrical, visual or mechanical performance and affected products will remain fully compliant to all published specifications. Products incorporating this change may be shipped interchangeably with existing unchanged products.
This change is planned to take effect in 90 calendar days from the date of this notification. Please work with your local Fairchild Sales Representative to manage your inventory of unchanged product if your evaluation of this change will require more than 90 calendar days.
Please contact your local Customer Quality Engineer within 30 days of receipt of this notification if you require any additional data or samples. Alternatively, you may send an email request for data, samples or other information to PCNSupport@fairchildsemi.com.

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