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FDZ208P

  

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FDZ208P_2002 [P-Channel 30 Volt PowerTrench® BGA MOSFET ] Fairchild
Fairchild Semiconductor

General Description
Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low Rds Battery Protection MOSFET. This MOSFET also embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra low profile packaging, low gate charge, and lowRDS(ON).

Features
· –12.5 A, –30 V. RDS(ON) = 10.5 mW @ VGS = –10 V
                  RDS(ON) = 16.5 mW @ VGS = –4.5 V
· Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8
· Ultra-thin package: less than 0.76 mm height when mounted to PCB
· 3.5 x 4 mm2 footprint
· High power and current handling capability

Applications
· Battery management
· Load switch
· Battery protection

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FDZ208P [P-Channel 30 Volt PowerTrench® BGA MOSFET ] Fairchild
Fairchild Semiconductor

General Description
Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with – 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low rDS(on) Battery Protection MOSFET. This MOSFET also embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra low profile packaging, low gate charge, and low rDS(on).

Features
• –12.5 A, –30 V. rDS(on) = 10.5 mW @ VGS = –10 V
                  rDS(on) = 16.5 mW @ VGS = –4.5 V
• Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8
• Ultra-thin package: less than 0.8 mm height when mounted to PCB
• 3.5 x 4 mm2 footprint
• High power and current handling capability

Applications
• Battery management
• Load switch
• Battery protection

View
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