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FQB9N25

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FQB9N25C [250V N-Channel MOSFET ]

other parts : FQI9N25C 

Fairchild
Fairchild Semiconductor

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features
• 8.8A, 250V, RDS(on) = 0.43Ω @VGS = 10 V
• Low gate charge ( typical 26.5 nC)
• Low Crss ( typical 45.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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FQB9N25 [250V N-Channel MOSFET ]

other parts : FQI9N25 

Fairchild
Fairchild Semiconductor

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features
• 9.4A, 250V, RDS(on) = 0.42Ω @VGS = 10 V
• Low gate charge ( typical 15.5 nC)
• Low Crss ( typical 15 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

View
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