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FQP1N60

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FQP1N60 [600V N-Channel MOSFET ] TGS
Tiger Electronic

DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
   

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FQP1N60 [QFET N-CHANNEL ] Fairchild
Fairchild Semiconductor

FEATURES
• Advanced New Design
• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• Unrivalled Gate Charge: 5.0nC (Typ.)
• Extended Safe Operating Area
• Lower RDS(ON): 9.3Ω (Typ.)
   

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