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FQP27P06

  

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FQP27P06 [P-Channel QFET® MOSFET - 60 V, - 27 A, 70 mΩ ] Fairchild
Fairchild Semiconductor

Description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features
• - 27 A, - 60 V, RDS(on) = 70 mΩ (Max.) @ VGS = - 10 V, ID = - 13.5 A
• Low Gate Charge (Typ. 33 nC)
• Low Crss (Typ. 120 pF)
• 100% Avalanche Tested
• 175C Maximum Junction Temperature Rating

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FQP27P06_01 [60V P-Channel MOSFET ] Fairchild
Fairchild Semiconductor

General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Features
• -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V
• Low gate charge ( typical 33 nC)
• Low Crss ( typical 120 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

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