These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
• 4A, 900V, RDS(on) = 4.2Ω @VGS = 10 V
• Low gate charge ( typical 17nC)
• Low Crss ( typical 5.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability