Integrated circuits, Transistor, Semiconductors Free Datasheet Search and Download Site

FQP6N90

  

데이터시트

일치하는 FQP6N90 FQP6N90C
시작하는 FQP6N90C*
끝나는 N/A
포함하는 N/A
상새내용 보기    
FQP6N90 [900V N-Channel MOSFET ] Fairchild
Fairchild Semiconductor
View
FQP6N90C [N-Channel QFET® MOSFET 900 V, 6.0 A, 2.3Ω ]

other parts : FQPF6N90C 

Fairchild
Fairchild Semiconductor

Description
This  N-Channel  enhancement  mode  power  MOSFET  is produced using Fairchild Semiconductor’s proprietary planar stripe  and  DMOS  technology.  This  advanced  MOSFET technology  has  been  especially  tailored  to  reduce  on-state resistance,  and  to  provide  superior  switching  performance and  high  avalanche  energy  strength.  These  devices  are suitable  for  switched  mode  power  supplies,  active  power factor correction (PFC), and electronic lamp ballasts.

Features
• 6.0 A, 900 V, RDS(on)= 2.3 Ω(Max.) @ VGS= 10 V,ID= 3.0 A
• Low Gate Charge (Typ. 30nC)
• Low Crss (Typ. 11pF)
• 100% Avalanche Tested

View
1

HOME




Language : English     日本語     русский     简体中文     español
@ 2015 - 2018  [ Home ][ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]