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FQPF5N50CT

  

데이터시트

일치하는 FQPF5N50CT
시작하는 FQPF5N50CTT*
끝나는 N/A
포함하는 N/A
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FQPF5N50CT [500V N-Channel MOSFET ]

other parts : FQP5N50C  FQPF5N50C  FQPF5N50CTTU  FQPF5N50CYDTU 

Fairchild
Fairchild Semiconductor

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features
• 5A, 500V, RDS(on)= 1.4Ω@VGS= 10 V
• Low gate charge ( typical 18nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

View
FQPF5N50CTTU [500V N-Channel MOSFET ]

other parts : FQP5N50C  FQPF5N50C  FQPF5N50CT  FQPF5N50CYDTU 

Fairchild
Fairchild Semiconductor

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features
• 5A, 500V, RDS(on)= 1.4Ω@VGS= 10 V
• Low gate charge ( typical 18nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

View
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