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FQPF7N60

  

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일치하는 FQPF7N60
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FQPF7N60 [600V N-Channel MOSFET ] KERSEMI
Kersemi Electronic Co., Ltd.

General Description
These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply

Features
• 4.3A, 600V, RDS(on) = 1.0Ω @VGS = 10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

 

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FQPF7N60 [600V N-Channel MOSFET ]

other parts : FQA12N60  FQA19N60  FQA24N60  FQA7N60  FQAF12N60  FQAF19N60  FQB12N60 

Fairchild
Fairchild Semiconductor

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

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