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FQPF9N50C

  

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일치하는 FQPF9N50C FQPF9N50CF FQPF9N50CT
시작하는 FQPF9N50CF* FQPF9N50CT*
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FQPF9N50C [500V N-Channel MOSFET ]

other parts : FQP9N50C  FQPF9N50CT 

Fairchild
Fairchild Semiconductor

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features
• 9 A, 500V, RDS(on)= 0.8 Ω@VGS= 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 24 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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FQPF9N50CF [500V N-Channel MOSFET ] Fairchild
Fairchild Semiconductor

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features
• 9A, 500V, RDS(on)= 0.85Ω@VGS= 10 V
• Low gate charge (typical 28 nC)
• Low Crss (typical 24pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (typical 100ns)

View
FQPF9N50CT [500V N-Channel MOSFET ]

other parts : FQP9N50C  FQPF9N50C 

Fairchild
Fairchild Semiconductor

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features
• 9 A, 500V, RDS(on)= 0.8 Ω@VGS= 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 24 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

View
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