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FR4104

  

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FR4104 [N-Channel MOSFET Transistor ]

other parts : IRFR4104  IIRFR4104 

Iscsemi
Inchange Semiconductor

• DESCRITION
• Fast switching

• FEATURES
• Static drain-source on-resistance:
   RDS(on)≤5.5mΩ
• Enhancement mode:
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation

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FR4104 [HEXFET® Power MOSFET ]

other parts : IRFR4104  IRFU4104  FU4104 

IR
International Rectifier

AUTOMOTIVE MOSFET

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tempera ture, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax

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FR4104 [HEXFET® Power MOSFET ]

other parts : IRFR4104  IRFU4104  FU4104 

KERSEMI
Kersemi Electronic Co., Ltd.

AUTOMOTIVE MOSFET

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax

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FR4104PBF [AUTOMOTIVE MOSFET ]

other parts : FU4104PBF  IRFR4104PBF  IRFU4104PBF 

KERSEMI
Kersemi Electronic Co., Ltd.

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free

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FR4104PBF_2010 [HEXFET® Power MOSFET ]

other parts : IRFR4104PBF_2010  IRFU4104PBF_2010  FU4104PBF_2010 

IR
International Rectifier

Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free

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