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FZT851

  

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Diodes
Diodes Incorporated.
FZT851 60V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features
• BVCEO > 60V
• IC = 6A High Continuous Collector Current
• ICM = 20A Peak Pulse Current
• Low Saturation Voltage VCE(sat) < 100mV @ 1A
• RCE(sat) = 44mΩ for a Low Equivalent On-Resistance
• hFE Specified Up to 10A for a High Gain Hold Up
• Complementary PNP Type: FZT951
• Lead-Free Finish; RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High


other parts : FZT851QTA FZT851TA 
Zetex
Zetex => Diodes
FZT851 SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

FEATURES
* Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A
* 6 Amps continuous current, up to 20 Amps peak current
* Very low saturation voltages
* Excellent hFE characteristics specified up to 10 Amps


other parts : FZT853 
Twtysemi
TY Semiconductor
FZT851 NPN Silicon Planar High Current (High Performance)Transistor

Features
● Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A.
● 6 Amps continuous current, up to 20 Amps peak current.
● Very low saturation voltages.
● Excellent hFE characteristics specified up to 10 Amps.

Kexin
KEXIN Industrial
FZT851 NPN Silicon Planar High Current (High Performance)Transistor

Features
● Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A.
● 6 Amps continuous current, up to 20 Amps peak current.
● Very low saturation voltages.
● Excellent hFE characteristics specified up to 10 Amps.

Diodes
Diodes Incorporated.
FZT851TA 60V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features
• BVCEO > 60V
• IC = 6A High Continuous Collector Current
• ICM = 20A Peak Pulse Current
• Low Saturation Voltage VCE(sat) < 100mV @ 1A
• RCE(sat) = 44mΩ for a Low Equivalent On-Resistance
• hFE Specified Up to 10A for a High Gain Hold Up
• Complementary PNP Type: FZT951
• Lead-Free Finish; RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High


other parts : FZT851QTA FZT851 
Diodes
Diodes Incorporated.
FZT851QTA 60V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features
• BVCEO > 60V
• IC = 6A High Continuous Collector Current
• ICM = 20A Peak Pulse Current
• Low Saturation Voltage VCE(sat) < 100mV @ 1A
• RCE(sat) = 44mΩ for a Low Equivalent On-Resistance
• hFE Specified Up to 10A for a High Gain Hold Up
• Complementary PNP Type: FZT951
• Lead-Free Finish; RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High


other parts : FZT851TA FZT851 

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