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HUFA75309D3

  

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 HUFA75309D3 HUFA75309D3S HUFA75309D3T
начиная HUFA75309D3S* HUFA75309D3T*
концы N/A
включая N/A
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HUFA75309D3 [19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs ]

other parts : 75309D  75309P  HUF75309P3  HUFA75309P3  HUFA75309D3S  HUFA75309P3T  HUFA75309D3T  HUFA75309D3ST 

Fairchild
Fairchild Semiconductor

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products.

Features
• 19A, 55V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER™ Models
   - SPICE and SABER Thermal Impedance Models
      Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

View
HUFA75309D3S [19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs ]

other parts : 75309D  75309P  HUF75309P3  HUFA75309D3  HUFA75309P3  HUFA75309P3T  HUFA75309D3T  HUFA75309D3ST 

Fairchild
Fairchild Semiconductor

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products.

Features
• 19A, 55V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER™ Models
   - SPICE and SABER Thermal Impedance Models
      Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

View
HUFA75309D3T [19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs ]

other parts : 75309D  75309P  HUF75309P3  HUFA75309D3  HUFA75309P3  HUFA75309D3S  HUFA75309P3T  HUFA75309D3ST 

Fairchild
Fairchild Semiconductor

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products.

Features
• 19A, 55V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER™ Models
   - SPICE and SABER Thermal Impedance Models
      Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

View
HUFA75309D3ST [19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs ]

other parts : 75309D  75309P  HUF75309P3  HUFA75309D3  HUFA75309P3  HUFA75309D3S  HUFA75309P3T  HUFA75309D3T 

Fairchild
Fairchild Semiconductor

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products.

Features
• 19A, 55V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER™ Models
   - SPICE and SABER Thermal Impedance Models
      Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

View
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