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HUFA75339P3

  

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 HUFA75339P3 HUFA75339P3T
начиная HUFA75339P3T*
концы N/A
включая N/A
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HUFA75339P3 [75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs ]

other parts : 75339G  75339P  75339S  HUFA75339G3  HUFA75339G3T  HUFA75339P3T  HUFA75339S3S  HUFA75339S3ST 

Fairchild
Fairchild Semiconductor

75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.

Features
• 75A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™ Models
- SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

 

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HUFA75339P3T [75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs ]

other parts : 75339G  75339P  75339S  HUFA75339G3  HUFA75339P3  HUFA75339G3T  HUFA75339S3S  HUFA75339S3ST 

Fairchild
Fairchild Semiconductor

75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.

Features
• 75A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™ Models
- SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

 

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