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HUFA75343G3

  

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 HUFA75343G3 HUFA75343G3T
начиная HUFA75343G3T*
концы N/A
включая N/A
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HUFA75343G3_2001 [75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs ]

other parts : 75343G_2001  75343P_2001  75343S_2001  HUFA75343P3_2001  HUFA75343G3T_2001  HUFA75343P3T_2001  HUFA75343S3S_2001  HUFA75343S3ST_2001 

Fairchild
Fairchild Semiconductor

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery operated products.

Features
• 75A, 55V
• Simulation Models
   - Temperature Compensating PSPICE® and SABER™ Models
   - Thermal Impedance PSPICE™ and SABER Models
      Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334, “Guidelines for Soldering Surface Mount
      Components to PC Boards”

View
HUFA75343G3 [75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs ]

other parts : HUFA75343P3  HUFA75343S3S  HUFA75343G3T  HUFA75343P3T  HUFA75343S3ST 

Fairchild
Fairchild Semiconductor

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery operated products.

Features
• 75A, 55V
• Simulation Models
   - Temperature Compensating PSPICE® and SABER™ Models
   - Thermal Impedance PSPICE™ and SABER Models
      Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334, “Guidelines for Soldering Surface Mount
      Components to PC Boards”

View
HUFA75343G3T_2001 [75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs ]

other parts : 75343G_2001  75343P_2001  75343S_2001  HUFA75343G3_2001  HUFA75343P3_2001  HUFA75343P3T_2001  HUFA75343S3S_2001  HUFA75343S3ST_2001 

Fairchild
Fairchild Semiconductor

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery operated products.

Features
• 75A, 55V
• Simulation Models
   - Temperature Compensating PSPICE® and SABER™ Models
   - Thermal Impedance PSPICE™ and SABER Models
      Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334, “Guidelines for Soldering Surface Mount
      Components to PC Boards”

View
HUFA75343G3T [75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs ]

other parts : HUFA75343G3  HUFA75343P3  HUFA75343S3S  HUFA75343P3T  HUFA75343S3ST 

Fairchild
Fairchild Semiconductor

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery operated products.

Features
• 75A, 55V
• Simulation Models
   - Temperature Compensating PSPICE® and SABER™ Models
   - Thermal Impedance PSPICE™ and SABER Models
      Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334, “Guidelines for Soldering Surface Mount
      Components to PC Boards”

View
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