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IPD10N03LA

  

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IPD10N03LA_2004 [OptiMOS®2 Power-Transistor ]

other parts : 10N03LA_2004  IPF10N03LA_2004  IPS10N03LA_2004  IPU10N03LA_2004  Q67042-S4238_2004  Q67042-S4239_2004  Q67042-S4247_2004  Q67042-S4242_2004 

Infineon
Infineon Technologies

Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature

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IPD10N03LA [OptiMOS®2 Power-Transistor ]

other parts : 10N03LA  IPF10N03LA  IPS10N03LA  IPU10N03LA  IPD10N03LAG  IPF10N03LAG  IPS10N03LAG  IPU10N03LAG 

Infineon
Infineon Technologies

Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant

View
IPD10N03LAG [OptiMOS®2 Power-Transistor ]

other parts : 10N03LA  IPD10N03LA  IPF10N03LA  IPS10N03LA  IPU10N03LA  IPF10N03LAG  IPS10N03LAG  IPU10N03LAG 

Infineon
Infineon Technologies

Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant

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