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IRF1010Z

  

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IRF1010Z [N-Channel MOSFET Transistor ]

other parts : IIRF1010Z 

Iscsemi
Inchange Semiconductor

• DESCRITION
• reliable device for use in a wide variety of applications

• FEATURES
• Static drain-source on-resistance:
   RDS(on) ≤7.5mΩ
• Enhancement mode
• Fast Switching Speed
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation

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IRF1010Z [HEXFET® Power MOSFET ]

other parts : F1010Z  F1010ZL  F1010ZS  IRF1010ZL  IRF1010ZS 

IR
International Rectifier

AUTOMOTIVE MOSFET

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating tempera ture, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax

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