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IRF130

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IRF130 [HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) ]

other parts : JANTX2N6756  JANTXV2N6756 

IR
International Rectifier

Product Summary
The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Features:
■ Repetitive Avalanche Ratings
■ Dynamic dv/dt Rating
■ Hermetically Sealed
■ Simple Drive Requirements
■ Ease of Paralleling

 

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IRF130 [N-CHANNEL POWER MOSFETS ]

other parts : IRF131  IRF132  IRF133 

Samsung
Samsung

FEATURES
● Low RDS(on)
● Improved inductive ruggedness
● Fast switching times
● Rugged polysilicon gate cell structure
● Low input capacitance
● Extended safe operating area
● Improved high temperature reliability
● TO-3 package (Standard)

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IRF130 [N-Channel MOSFET Transistor ] Iscsemi
Inchange Semiconductor

DESCRIPTION
• Drain Current ID=14A@ TC=25℃
• Drain Source Voltage-
   : VDSS= 100V(Min)
• Static Drain-Source On-Resistance
   : RDS(on) =0.18Ω(Max)
• High Power,High Speed Applications

APPLICATIONS
• Switching power supplies
• UPS
• Motor controls
• High energy pulse circuits.

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IRF130 [N-Channel Power MOSFETs, 20 A, 60-100 V ]

other parts : IRF131  IRF132  IRF133  IRF530  IRF531  IRF532  IRF533  MTP20N10  MTP20N08  IRF530-533 

Fairchild
Fairchild Semiconductor

Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits.

● Low RDS(on)
● VGS Rated at ±20 V
● Silicon Gate for Fast Switching Speeds
● IDSS, VDS(on), Specified at Elevated Temperature
● Rugged
● Low Drive Requirements
● Ease of Paralleling

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IRF130 [N–CHANNEL POWER MOSFET ] Semelab
Semelab - > TT Electronics plc

FEATURES
• HERMETICALLY SEALED TO–3 METAL PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• SCREENING OPTIONS AVAILABLE

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IRF130 [14A, 100V, 0.160 Ohm, N-Channel Power MOSFET ] Intersil
Intersil

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 14A, 100V
• rDS(ON) = 0.160Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

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IRF130 [REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS ] NJSEMI
New Jersey Semiconductor

Features:
• Repetitive Avalanche Ratings
• Dynamic dv/dt Rating
• HermeticallySealed
• Simple Drive Requirements
• Ease ofParalleling

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IRF1302 [AUTOMOTIVE MOSFET ] IR
International Rectifier

Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax

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IRF1302L [AUTOMOTIVE MOSFET ]

other parts : IRF1302S 

IR
International Rectifier

Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax

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IRF1302S [AUTOMOTIVE MOSFET ]

other parts : IRF1302L 

IR
International Rectifier

Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax

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